IRFB7787PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB7787PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 76 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 48 nS
Cossⓘ - Capacitancia de salida: 330 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
Encapsulados: TO-220AB
Búsqueda de reemplazo de IRFB7787PBF MOSFET
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IRFB7787PBF datasheet
..1. Size:985K international rectifier
irfb7787pbf irfs7787pbf irfsl7787pbf.pdf 
StrongIRFET IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 8.4m Resonant mode power supplies S OR-ing
6.1. Size:667K international rectifier
irfb7787 irfs7787pbf irfsl7787pbf.pdf
StrongIRFET IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 8.4m Resonant mode power suppl
6.2. Size:246K inchange semiconductor
irfb7787.pdf
isc N-Channel MOSFET Transistor IRFB7787,IIRFB7787 FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous Rectifier applications Resonant mode power supplies Battery powered circuits ABSOL
8.1. Size:530K international rectifier
irfb7740.pdf
StrongIRFET IRFB7740PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 7.3m Resonant mode power supplies S OR-ing and redun
8.2. Size:653K international rectifier
irfb7734pbf irfs7734pbf irfsl7734pbf.pdf
StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp
8.3. Size:529K international rectifier
irfb7746.pdf
StrongIRFET IRFB7746PbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 9.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 10.6m Resonant mode power supplies S OR-ing and red
8.4. Size:657K international rectifier
irfb7730 irfs7730pbf irfsl7730pbf.pdf
StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6m G Synchronous rectifier applications ID (Silicon Limited) 246A
8.5. Size:650K international rectifier
irfb7734 irfs7734pbf irfsl7734pbf.pdf
StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp
8.6. Size:657K international rectifier
irfb7730pbf irfs7730pbf irfsl7730pbf.pdf
StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6m G Synchronous rectifier applications ID (Silicon Limited) 246A
8.7. Size:245K inchange semiconductor
irfb7740.pdf
isc N-Channel MOSFET Transistor IRFB7740 IIRFB7740 FEATURES Static drain-source on-resistance RDS(on) 7.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.8. Size:245K inchange semiconductor
irfb7746.pdf
isc N-Channel MOSFET Transistor IRFB7746 IIRFB7746 FEATURES Static drain-source on-resistance RDS(on) 10.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.9. Size:246K inchange semiconductor
irfb7734.pdf
isc N-Channel MOSFET Transistor IRFB7734,IIRFB7734 FEATURES Static drain-source on-resistance RDS(on) 3.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous Rectifier applications Resonant mode power supplies Battery powered circuits ABSOL
8.10. Size:246K inchange semiconductor
irfb7730.pdf
isc N-Channel MOSFET Transistor IRFB7730,IIRFB7730 FEATURES Static drain-source on-resistance RDS(on) 2.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous Rectifier applications Resonant mode power supplies Battery powered circuits ABSOL
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