IRFH5302DPBF Todos los transistores

 

IRFH5302DPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFH5302DPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.35 V
   Qgⓘ - Carga de la puerta: 55 nC
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 680 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: PQFN5X6

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IRFH5302DPBF Datasheet (PDF)

 ..1. Size:258K  international rectifier
irfh5302dpbf.pdf

IRFH5302DPBF
IRFH5302DPBF

IRFH5302DPbFHEXFET Power MOSFETVDS 30 VRDS(on) max 2.5 m(@VGS = 10V)VSD max 0.65 V(@IS = 5.0A)trr (typical)19 nsID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsBenefitsFeaturesLow RDSon (

 ..2. Size:241K  infineon
irfh5302dpbf.pdf

IRFH5302DPBF
IRFH5302DPBF

IRFH5302DPbFHEXFET Power MOSFETVDS 30 VRDS(on) max 2.5 m(@VGS = 10V)VSD max 0.65 V(@IS = 5.0A)trr (typical)19 nsID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsBenefitsFeaturesLow RDSon (

 6.1. Size:240K  1
irfh5302trpbf.pdf

IRFH5302DPBF
IRFH5302DPBF

IRFH5302PbFHEXFET Power MOSFETVDS 30 VRDS(on) max 2.1 m(@VGS = 10V)Qg (typical) 29 nCRG (typical) 1.6 ID 100 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeatures )Low RDSon (

 6.2. Size:209K  international rectifier
irfh5302.pdf

IRFH5302DPBF
IRFH5302DPBF

PD -97156IRFH5302PbFHEXFET Power MOSFETVDS30 VRDS(on) max 2.1 m(@VGS = 10V)Qg (typical) 29nCRG (typical) 1.6ID 100 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeatures

 6.3. Size:240K  infineon
irfh5302pbf.pdf

IRFH5302DPBF
IRFH5302DPBF

IRFH5302PbFHEXFET Power MOSFETVDS 30 VRDS(on) max 2.1 m(@VGS = 10V)Qg (typical) 29 nCRG (typical) 1.6 ID 100 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeatures )Low RDSon (

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