IRFH5302DPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH5302DPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 104 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.35 V
Carga de la puerta (Qg): 55 nC
Tiempo de subida (tr): 30 nS
Conductancia de drenaje-sustrato (Cd): 680 pF
Resistencia entre drenaje y fuente RDS(on): 0.0025 Ohm
Paquete / Cubierta: PQFN5X6
Búsqueda de reemplazo de MOSFET IRFH5302DPBF
IRFH5302DPBF Datasheet (PDF)
irfh5302dpbf.pdf
IRFH5302DPbFHEXFET Power MOSFETVDS 30 VRDS(on) max 2.5 m(@VGS = 10V)VSD max 0.65 V(@IS = 5.0A)trr (typical)19 nsID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5302dpbf.pdf
IRFH5302DPbFHEXFET Power MOSFETVDS 30 VRDS(on) max 2.5 m(@VGS = 10V)VSD max 0.65 V(@IS = 5.0A)trr (typical)19 nsID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5302trpbf.pdf
IRFH5302PbFHEXFET Power MOSFETVDS 30 VRDS(on) max 2.1 m(@VGS = 10V)Qg (typical) 29 nCRG (typical) 1.6 ID 100 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeatures )Low RDSon (
irfh5302.pdf
PD -97156IRFH5302PbFHEXFET Power MOSFETVDS30 VRDS(on) max 2.1 m(@VGS = 10V)Qg (typical) 29nCRG (typical) 1.6ID 100 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeatures
irfh5302pbf.pdf
IRFH5302PbFHEXFET Power MOSFETVDS 30 VRDS(on) max 2.1 m(@VGS = 10V)Qg (typical) 29 nCRG (typical) 1.6 ID 100 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeatures )Low RDSon (
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