IRFH7545PBF Todos los transistores

 

IRFH7545PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH7545PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 85 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 26 nS

Cossⓘ - Capacitancia de salida: 365 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm

Encapsulados: PQFN5X6

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IRFH7545PBF datasheet

 ..1. Size:557K  international rectifier
irfh7545pbf.pdf pdf_icon

IRFH7545PBF

StrongIRFET IRFH7545PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 4.3m Half-bridge and full-bridge topologies Synchronous rectifier applications max 5.2m Resonant mode power supplies ID 85A OR-ing and re

 6.1. Size:557K  international rectifier
irfh7545.pdf pdf_icon

IRFH7545PBF

StrongIRFET IRFH7545PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 4.3m Half-bridge and full-bridge topologies Synchronous rectifier applications max 5.2m Resonant mode power supplies ID 85A OR-ing and re

 9.1. Size:288K  1
irfh7914trpbf.pdf pdf_icon

IRFH7545PBF

IRFH7914PbF HEXFET Power MOSFET Applications l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power 8.7m 30V @VGS = 10V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-

 9.2. Size:260K  1
irfh7934trpbf.pdf pdf_icon

IRFH7545PBF

IRFH7934PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power 30V 3.5m @VGS = 10V 20nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG PQFN 5X6 mm l L

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