IRFR3707ZPBF Todos los transistores

 

IRFR3707ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR3707ZPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.25 V
   Qgⓘ - Carga de la puerta: 9.6 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
   Paquete / Cubierta: TO252

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IRFR3707ZPBF Datasheet (PDF)

 ..1. Size:546K  infineon
irfr3707zpbf irfu3707zpbf.pdf

IRFR3707ZPBF
IRFR3707ZPBF

IRFR3707ZPbF IRFU3707ZPbF HEXFET Power MOSFET Applications High Frequency Synchronous Buck VDSS 30V Converters for Computer Processor Power RDS(on) max 9.5m High Frequency Isolated DC-DC Converters with Synchronous Rectification Qg 9.6nC for Telecom and Industrial Use D D S S D G G I- Pak D- Pak Benefits IRFU3707ZPbF IRFR3707ZPbF

 5.1. Size:215K  international rectifier
irfr3707z.pdf

IRFR3707ZPBF
IRFR3707ZPBF

PD - 94648IRFR3707ZIRFU3707ZApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 9.5m: 9.6nC Converters with Synchronous Rectification for Telecom and Industrial UseBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche

 5.2. Size:295K  international rectifier
irfr3707zcpbf irfu3707zcpbf.pdf

IRFR3707ZPBF
IRFR3707ZPBF

PD - 96045IRFR3707ZCPbFIRFU3707ZCPbFApplicationsl High Frequency Synchronous Buck HEXFET Power MOSFETConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC Converters with Synchronous Rectification30V 9.5m 9.6nC for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Char

 5.3. Size:845K  cn vbsemi
irfr3707ztr.pdf

IRFR3707ZPBF
IRFR3707ZPBF

IRFR3707ZTRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABS

 5.4. Size:243K  inchange semiconductor
irfr3707z.pdf

IRFR3707ZPBF
IRFR3707ZPBF

isc N-Channel MOSFET Transistor IRFR3707Z, IIRFR3707ZFEATURESStatic drain-source on-resistance:RDS(on)9.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck ConvertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

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