IRFZ48VPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFZ48VPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 150 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 72 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 110(max) nC
   Tiempo de subida (tr): 200 nS
   Conductancia de drenaje-sustrato (Cd): 496 pF
   Resistencia entre drenaje y fuente RDS(on): 0.012 Ohm
   Paquete / Cubierta: TO-220AB

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IRFZ48VPBF Datasheet (PDF)

..1. Size:223K infineon
irfz48vpbf.pdf

PD - 94992AIRFZ48VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 12ml Fully Avalanche RatedGl Optimized for SMPS ApplicationsID = 72Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced pro

..2. Size:861K cn vbsemi
irfz48vpbf.pdf

IRFZ48VPBFwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

7.1. Size:282K international rectifier
irfz48vs.pdf

PD - 94051AIRFZ48VSHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12mG Fast Switching Fully Avalanche RatedID = 72A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to a

7.2. Size:179K international rectifier
irfz48vspbf.pdf

PD - 95573IRFZ48VSPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 60Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 12mGl Fully Avalanche Ratedl Optimized for SMPS ApplicationsID = 72ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced proc

7.3. Size:111K international rectifier
irfz48v.pdf

PD - 93959AIRFZ48VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12mG Fast Switching Fully Avalanche RatedID = 72A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ac

7.4. Size:213K inchange semiconductor
irfz48vs.pdf

isc N-Channel MOSFET Transistor IRFZ48VSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

7.5. Size:246K inchange semiconductor
irfz48v.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ48V IIRFZ48VFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

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