IRL2910LPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL2910LPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 55 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 630 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Paquete / Cubierta: TO-262
Búsqueda de reemplazo de IRL2910LPBF MOSFET
IRL2910LPBF Datasheet (PDF)
irl2910spbf irl2910lpbf.pdf

PD - 95149IRL2910S/LPbFHEXFET Power MOSFET Logic-Level Gate Drive Surface MountD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.026 Fast SwitchingG Fully Avalanche RatedID = 55A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveext
irl2910s irl2910l.pdf

PD - 91376BIRL2910S/LHEXFET Power MOSFET Logic-Level Gate DriveD Surface MountVDSS = 100V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.026 Dynamic dv/dt RatingG Fast Switching Fully Avalanche RatedID = 55ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-
irl2910l.pdf

Isc N-Channel MOSFET Transistor IRL2910LFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irl2910n.pdf

PD 9.1375IRL2910PRELIMINARYHEXFET Power MOSFETLogic-Level Gate DriveAdvanced Process TechnologyVDSS = 100VUltra Low On-ResistanceDynamic dv/dt RatingRDS(on) = 0.026175C Operating TemperatureFast SwitchingID = 48AFully Avalanche RatedDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely l
Otros transistores... IRFU3710ZPBF , IRFZ44ELPBF , IRFZ44VZLPBF , IRFZ48NSPBF , IRFZ48VPBF , IRL1404ZLPBF , IRL1404ZSPBF , IRL2505LPBF , IRF1405 , IRL40B209 , IRL40T209 , IRL530NPBF , IRL540NLPBF , IRL60HS118 , IRL60SC216 , IRL80HS120 , IRLI530NPBF .



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