IRL40T209 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL40T209
Código: RL40T209
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 500 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 300 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 2.4 V
Qgⓘ - Carga de la puerta: 179 nC
trⓘ - Tiempo de subida: 230 nS
Cossⓘ - Capacitancia de salida: 2200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00072 Ohm
Paquete / Cubierta: HSOF
Búsqueda de reemplazo de MOSFET IRL40T209
IRL40T209 Datasheet (PDF)
irl40t209.pdf
IRL40T209MOSFETHSOFIR MOSFET - StrongIRFETBenefitsTab Improved Gate and Avalanche Ruggedness Fully Characterized Capacitance and Avalanche SOA Improved I ratingD1 Pb-Free ; RoHS Compliant ; Halogen-Free 2345678Potential applications Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-b
irl40b212 irl40s212.pdf
StrongIRFET IRL40B212 IRL40S212 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.5m Half-bridge and full-bridge topologies max 1.9m Synchronous rectifier applications GID (Silicon Limited) 254A Resonant mode powe
irl40b215.pdf
StrongIRFET IRL40B215 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.2mBattery powered circuits max 2.7m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 164A Resonant mode power suppli
irl40b209.pdf
StrongIRFET IRL40B209 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.0m Half-bridge and full-bridge topologies max 1.25m Synchronous rectifier applications GID (Silicon Limited) 414A Resonant mode power supplies
irl40b212 irl40s212.pdf
StrongIRFET IRL40B212 IRL40S212 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.5m Half-bridge and full-bridge topologies max 1.9m Synchronous rectifier applications GID (Silicon Limited) 254A Resonant mode powe
irl40b215.pdf
StrongIRFET IRL40B215 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.2mBattery powered circuits max 2.7m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 164A Resonant mode power suppli
irl40b212.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL40B212IIRL40B212FEATURESStatic drain-source on-resistance:RDS(on) 1.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM
irl40s212.pdf
isc N-Channel MOSFET Transistor IRL40S212FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
irl40b215.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL40B215IIRL40B215FEATURESStatic drain-source on-resistance:RDS(on) 2.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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