ISP25DP06LM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ISP25DP06LM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm

Encapsulados: SOT223

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ISP25DP06LM datasheet

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 isp25dp06lm.pdf pdf_icon

ISP25DP06LM

ISP25DP06LM MOSFET SOT-223-4 OptiMOSTM Small Signal Transistor, -60 V Features 4 P-Channel Very low on-resistance R @ V =4.5 V DS(on) GS 100% avalanche tested Logic Level 1 Enhancement mode 2 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 3 Product validation Fully qualified according to JEDEC for Industrial Applications

 0.1. Size:741K  infineon
 isp25dp06lms.pdf pdf_icon

ISP25DP06LM

ISP25DP06LMS MOSFET PG-SOT223-3 OptiMOSTM Small Signal Transistor, -60 V Features P-Channel Very low on-resistance R @ V =4.5 V DS(on) GS 100% avalanche tested Logic Level Enhancement mode Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified according to JEDEC Standard Drain Pin 2 Gate Table 1 Key

 5.1. Size:1172K  infineon
 isp25dp06nm.pdf pdf_icon

ISP25DP06LM

ISP25DP06NM MOSFET SOT-223-4 OptiMOSTM Small Signal Transistor, -60 V Features 4 P-Channel Very low on-resistance R DS(on) 100% avalanche tested Normal Level 1 Enhancement mode 2 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 3 Product validation Fully qualified according to JEDEC for Industrial Applications Drain Pin 2

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