LPM3401 Todos los transistores

 ..1. Size:375K  lowpower
 lpm3401.pdf

Preliminary Datasheet LPM3401 15V/4A P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3401 is the P-channel logic enhancement -15V/-4.0A,RDS(ON) 58m (typ.)@VGS=-10V mode power field effect transistors are produced using -15V/-3.0A,RDS(ON) 68m (typ.)@VGS=-4.5V high cell density, DMOS trench technology. Super high density cell desi

 8.1. Size:228K  lowpower
 lpm3406b3f.pdf

Preliminary Datasheet LPM3406 30V/3.6A N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3406 is N-channel logic enhancement mode 30V/3A, R =48m (Typ.)@VGS=4.5V DS(ON) power field effect transistor, which are produced by 30V/3.6A, R =36m (Typ.)@VGS=10V DS(ON) using high cell density, DMOS trench technology. Super high density cell d

 8.2. Size:876K  lowpower
 lpm3400b3f.pdf

Preliminary Datasheet LPM3400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3400 uses advanced trench technology to 20V/5A, R 33m (max.)@VGS=4.5V DS(ON) provide excellent R , low gate charge and 20V/4A, R 52m (max.)@VGS=2.5V DS(ON) DS(ON) operation with gate voltages as low as 1.1V. This Super high density cell design for

 9.1. Size:396K  lowpower
 lpm3413.pdf

Preliminary Datasheet LPM3413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3413 uses advanced trench technology to -20V/2.0A,R 130m (max.)@VGS=-2.5V DS(ON) provide excellent R . This device is suitable for -20V/3A,R 95m (max.)@VGS=-4.5V DS(ON) DS(ON) using as a load switch or in PWM applications. Super high density cell