LPM3400B3F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: LPM3400B3F
   Código: A2S*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Qgⓘ - Carga de la puerta: 9.7 nC
   trⓘ - Tiempo de subida: 4.8 nS
   Cossⓘ - Capacitancia de salida: 99 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SOT23

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LPM3400B3F Datasheet (PDF)

..1. Size:876K lowpower
lpm3400b3f.pdf

Preliminary Datasheet LPM3400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3400 uses advanced trench technology to 20V/5A, R 33m(max.)@VGS=4.5V DS(ON)provide excellent R , low gate charge and 20V/4A, R 52m(max.)@VGS=2.5V DS(ON) DS(ON)operation with gate voltages as low as 1.1V. This Super high density cell design for

8.1. Size:375K lowpower
lpm3401.pdf

Preliminary Datasheet LPM3401 15V/4A P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3401 is the P-channel logic enhancement -15V/-4.0A,RDS(ON)58m(typ.)@VGS=-10V mode power field effect transistors are produced using -15V/-3.0A,RDS(ON)68m(typ.)@VGS=-4.5V high cell density, DMOS trench technology. Super high density cell desi

8.2. Size:228K lowpower
lpm3406b3f.pdf

Preliminary Datasheet LPM3406 30V/3.6A N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3406 is N-channel logic enhancement mode 30V/3A, R =48m(Typ.)@VGS=4.5V DS(ON)power field effect transistor, which are produced by 30V/3.6A, R =36m(Typ.)@VGS=10V DS(ON)using high cell density, DMOS trench technology. Super high density cell d

9.1. Size:396K lowpower
lpm3413.pdf

Preliminary Datasheet LPM3413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3413 uses advanced trench technology to -20V/2.0A,R 130m(max.)@VGS=-2.5V DS(ON) provide excellent R . This device is suitable for -20V/3A,R 95m(max.)@VGS=-4.5V DS(ON) DS(ON) using as a load switch or in PWM applications. Super high density cell

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