LPM3400B3F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LPM3400B3F
Código: A2S*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 5.8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.4 V
Carga de la puerta (Qg): 9.7 nC
Tiempo de subida (tr): 4.8 nS
Conductancia de drenaje-sustrato (Cd): 99 pF
Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET LPM3400B3F
LPM3400B3F Datasheet (PDF)
lpm3400b3f.pdf
Preliminary Datasheet LPM3400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3400 uses advanced trench technology to 20V/5A, R 33m(max.)@VGS=4.5V DS(ON)provide excellent R , low gate charge and 20V/4A, R 52m(max.)@VGS=2.5V DS(ON) DS(ON)operation with gate voltages as low as 1.1V. This Super high density cell design for
lpm3401.pdf
Preliminary Datasheet LPM3401 15V/4A P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3401 is the P-channel logic enhancement -15V/-4.0A,RDS(ON)58m(typ.)@VGS=-10V mode power field effect transistors are produced using -15V/-3.0A,RDS(ON)68m(typ.)@VGS=-4.5V high cell density, DMOS trench technology. Super high density cell desi
lpm3406b3f.pdf
Preliminary Datasheet LPM3406 30V/3.6A N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3406 is N-channel logic enhancement mode 30V/3A, R =48m(Typ.)@VGS=4.5V DS(ON)power field effect transistor, which are produced by 30V/3.6A, R =36m(Typ.)@VGS=10V DS(ON)using high cell density, DMOS trench technology. Super high density cell d
lpm3413.pdf
Preliminary Datasheet LPM3413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3413 uses advanced trench technology to -20V/2.0A,R 130m(max.)@VGS=-2.5V DS(ON) provide excellent R . This device is suitable for -20V/3A,R 95m(max.)@VGS=-4.5V DS(ON) DS(ON) using as a load switch or in PWM applications. Super high density cell
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