LPM9042 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LPM9042
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17.2 nS
Cossⓘ - Capacitancia de salida: 215 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de LPM9042 MOSFET
LPM9042 Datasheet (PDF)
lpm9042.pdf

Preliminary Datasheet LPM9042 Dual channel 40V N-Channel MOSFET General Description Features 100% EAS Guaranteed The LPM9042 is a dual channel MOSFET, which uses advanced trench technology to provide excellent Green Device Available R with low gate charge. Each channel has all the DS(ON) Super Low Gate Charge features. This is an all purpose device that is suitable
lpm9040a.pdf

Preliminary Datasheet LPM9040A 30V N-Channel MOSFET General Description Features 100% EAS Guaranteed The LPM9040A uses advanced trench technology to provide excellent R with low gate charge. This is Green Device Available DS(ON)an all purpose device that is suitable for use in a wide Super Low Gate Charge range of power conversion applications. Excellent CdV/
lpm9029c.pdf

Preliminary Datasheet LPM9029C N and P-Channel Enhancement Power MOSFET General Description Features The LPM9029C integrates N-Channel and P-Channel Trench Technology enhancement MOSFET Transistor. It uses advanced NMOS: trench technology and design to provide excellent V =20V, I =12A NDS NDR with low gate charge. This device is suitable R
lpm9031sof lpm9031qvf.pdf

Preliminary Datasheet LPM9031 Dual channel N-Channel MOSFEGeneral Description Features 100% EAS Guaranteed The LPM9031 is a dual channel MOSFET, which combines advanced trench MOSFET technology Green Device Available with a low resistance package to provide extremely Super Low Gate Charge low RDS(ON). This device is suitable for use as a load Excellent CdV/dt e
Otros transistores... LPM8205TSF , LPM9021QVF , LPM9029C , LPM9030 , LPM9031SOF , LPM9031QVF , LPM9033QVF , LPM9040A , STP75NF75 , LPM9435 , LPM9926SOF , 2KJ7107DFN , 2KK5016 , AO6401-HF , FDC2512-HF , FDC3612-HF , KI2302 .
History: ME4920-G | FM400HB1D5C | TPC6004 | SI4N65F | STB60NF10T4 | IPU33CN10N | IRF6811S
History: ME4920-G | FM400HB1D5C | TPC6004 | SI4N65F | STB60NF10T4 | IPU33CN10N | IRF6811S



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
2sa1360 | p60nf06 datasheet | 2sc4468 | ru6888r | 2sc1815y | ktc3964 | s9013 transistor equivalent | 60n60 mosfet