LPM9042 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LPM9042
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.7 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 27.2 nC
Tiempo de subida (tr): 17.2 nS
Conductancia de drenaje-sustrato (Cd): 215 pF
Resistencia entre drenaje y fuente RDS(on): 0.01 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET LPM9042
LPM9042 Datasheet (PDF)
lpm9042.pdf
Preliminary Datasheet LPM9042 Dual channel 40V N-Channel MOSFET General Description Features 100% EAS Guaranteed The LPM9042 is a dual channel MOSFET, which uses advanced trench technology to provide excellent Green Device Available R with low gate charge. Each channel has all the DS(ON) Super Low Gate Charge features. This is an all purpose device that is suitable
lpm9040a.pdf
Preliminary Datasheet LPM9040A 30V N-Channel MOSFET General Description Features 100% EAS Guaranteed The LPM9040A uses advanced trench technology to provide excellent R with low gate charge. This is Green Device Available DS(ON)an all purpose device that is suitable for use in a wide Super Low Gate Charge range of power conversion applications. Excellent CdV/
lpm9029c.pdf
Preliminary Datasheet LPM9029C N and P-Channel Enhancement Power MOSFET General Description Features The LPM9029C integrates N-Channel and P-Channel Trench Technology enhancement MOSFET Transistor. It uses advanced NMOS: trench technology and design to provide excellent V =20V, I =12A NDS NDR with low gate charge. This device is suitable R
lpm9031sof lpm9031qvf.pdf
Preliminary Datasheet LPM9031 Dual channel N-Channel MOSFEGeneral Description Features 100% EAS Guaranteed The LPM9031 is a dual channel MOSFET, which combines advanced trench MOSFET technology Green Device Available with a low resistance package to provide extremely Super Low Gate Charge low RDS(ON). This device is suitable for use as a load Excellent CdV/dt e
lpm9030.pdf
Preliminary Datasheet LPM9030 N-Ch and P-Ch Fast Switching MOSFETs General Description Features 100% EAS Guaranteed The LPM9030 is the high performance complementary N-ch and P-ch MOSFETs with high cell density, which Green Device Available provide excellent RDSON and gate charge for most of Super Low Gate Charge the synchronous buck converter applications. Exc
lpm9033qvf.pdf
Preliminary Datasheet LPM9033 Dual channel 30V N-Channel MOSFET General Description Features 100% EAS Guaranteed The LPM9033 is a dual channel MOSFET, which uses advanced trench technology to provide excellent Green Device Available R with low gate charge. Each channel has all the DS(ON) Super Low Gate Charge features. This is an all purpose device that is suitable
lpm9021qvf.pdf
Preliminary Datasheet LPM9021 Single P-Channel, -12V, -6.5A, Power MOSFET General Description Features The LPM9021 is P-Channel enhancement MOSFET Trench Technology Effect Transistor. It uses advanced trench technology Super high density cell design and design to provide excellent RDS (ON) with low Excellent ON resistance for higher DC current Extremely Low Threshold
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
