KRlML2402 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KRlML2402
   Código: 1A*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 2.6 nC
   trⓘ - Tiempo de subida: 9.5 nS
   Cossⓘ - Capacitancia de salida: 51 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
   Paquete / Cubierta: SOT23

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KRlML2402 Datasheet (PDF)

..1. Size:2066K kexin
irlml2402 krlml2402.pdf

SMD Type MOSFETN-Channel MOSFETIRLML2402 (KRlML2402)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V)1 2+0.1+0.050.95 -0.1 RDS(ON) 250m (VGS = 4.5V) 0.1 -0.011.9+0.1D -0.1 RDS(ON) 350m (VGS = 2.7V)1. GateG2. Source3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symb

8.1. Size:457K tysemi
krlml2502.pdf

SMD Type MOSFETSMDType MOSFETSMDTypee ans istICDIP Type TrMOSFETSMD TypeDIP TySMD TyppeeDIP TyppeeSMD CSMD Ty IorSMD Typ ICSMD Type ICDIP Type MOSFETSMDTypeSMDType ICTypeProduct specificationKRLML2502SOT-23-3Unit: mm+0.22.9-0.2Features0.4+0.1-0.053Ultra Low On-ResistanceN-Channel MOSFETLow Profile (

9.1. Size:467K tysemi
krlml6402.pdf

SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type MOSFETSMD Type MOSFESMD Type MOSFESMD TypeSMD TypeSMD Type

9.2. Size:1420K kexin
krlml0100.pdf

SMD Type MOSFETN-Channel MOSFETIRLML0100 (KRLML0100)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 100V ID = 1.6A (VGS = 10V)1 2+0.02+0.1 RDS(ON) 220m (VGS = 10V) 0.15 -0.020.95 -0.1+0.11.9 -0.2G 1 RDS(ON) 235m (VGS = 4.5V)3 D1. Gate2. SourceS 23. Drain Absolute Maximum Ratings Ta = 25Param

9.3. Size:2328K kexin
irlml6401 krlml6401.pdf

SMD TypeSM MOSFETP-Channel Enhancement MOSFETIRLML6401 KRLML6401)(SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 Ultra low on-resistance.3 P-Channel MOSFET. Fast switching.1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base1. Gate2.Emitter2. Source3. Drain3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

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