KRLML6401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRLML6401
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 4.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32 nS
Cossⓘ - Capacitancia de salida: 180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: SOT23
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KRLML6401 Datasheet (PDF)
irlml6401 krlml6401.pdf
SMD TypeSM MOSFETP-Channel Enhancement MOSFETIRLML6401 KRLML6401)(SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 Ultra low on-resistance.3 P-Channel MOSFET. Fast switching.1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base1. Gate2.Emitter2. Source3. Drain3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Ra
krlml6402.pdf
SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type MOSFETSMD Type MOSFESMD Type MOSFESMD TypeSMD TypeSMD Type
krlml2502.pdf
SMD Type MOSFETSMDType MOSFETSMDTypee ans istICDIP Type TrMOSFETSMD TypeDIP TySMD TyppeeDIP TyppeeSMD CSMD Ty IorSMD Typ ICSMD Type ICDIP Type MOSFETSMDTypeSMDType ICTypeProduct specificationKRLML2502SOT-23-3Unit: mm+0.22.9-0.2Features0.4+0.1-0.053Ultra Low On-ResistanceN-Channel MOSFETLow Profile (
krlml0100.pdf
SMD Type MOSFETN-Channel MOSFETIRLML0100 (KRLML0100)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 100V ID = 1.6A (VGS = 10V)1 2+0.02+0.1 RDS(ON) 220m (VGS = 10V) 0.15 -0.020.95 -0.1+0.11.9 -0.2G 1 RDS(ON) 235m (VGS = 4.5V)3 D1. Gate2. SourceS 23. Drain Absolute Maximum Ratings Ta = 25Param
irlml2402 krlml2402.pdf
SMD Type MOSFETN-Channel MOSFETIRLML2402 (KRlML2402)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V)1 2+0.1+0.050.95 -0.1 RDS(ON) 250m (VGS = 4.5V) 0.1 -0.011.9+0.1D -0.1 RDS(ON) 350m (VGS = 2.7V)1. GateG2. Source3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symb
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