ME2602 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME2602
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 24 nC
Tiempo de subida (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 145 pF
Resistencia entre drenaje y fuente RDS(on): 0.1 Ohm
Paquete / Cubierta: SOT-223
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ME2602 Datasheet (PDF)
me2602 me2602-g.pdf
ME2602/ME2602-G N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10V The ME2602 is the N-Channel logic enhancement mode power field RDS(ON)115m@VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially ta
me2604 me2604-g.pdf
ME2604/ME2604-GN - Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)1.7@VGS=10V The ME2604 is the N-Channel logic enhancement mode power field RDS(ON)1.9@VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially t
me2606 me2606-g.pdf
ME2606/ME2606-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2606 is the N-Channel logic enhancement mode power field RDS(ON)420m@VGS=10V effect transistors are produced using high cell density DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to Exceptional on-resistan
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