ME4925-G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ME4925-G datasheet

..1. Size:1135K matsuki electric
me4925 me4925-g.pdf pdf_icon

ME4925/ME4925-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4925 is the Dual P-Channel logic enhancement mode power RDS(ON) 22m @VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON) 30m @VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely

8.1. Size:829K cn vbsemi
me4925.pdf pdf_icon

ME4925 www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD 1 8

9.1. Size:892K matsuki electric
me4920 me4920-g.pdf pdf_icon

ME4920/ME4920-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 35 m @VGS=10V The ME4920 is the N-Channel logic enhancement mode power field RDS(ON) 45 m @VGS=4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to

Otros transistores... ME45N03T-G , ME45P04 , ME45P04-G , ME4626 , ME4626-G , ME4825 , ME4825-G , ME4925 , IRFP260N , ME4946 , ME4946-G , ME4953-G , ME4954 , ME4954-G , ME4970-G , ME50N06A , ME50N06A-G .