ME60N03AS-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME60N03AS-G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 53 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 180 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de ME60N03AS-G MOSFET
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ME60N03AS-G datasheet
me60n03as me60n03as-g.pdf
ME60N03AS/ME60N03AS-G 25V N-Channel Enhancement Mode MOSFET VDS=25V APPLICATIONS Motherboard (V-Core) RDS(ON), Vgs@10V,Ids@30A 9m DC/DC Converter RDS(ON), Vgs@ 5V,Ids@15A 18m Load Switch LCD Display inverter FEATURES IPC Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC co
me60n03a.pdf
ME60N03A 25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute
me60n03.pdf
ME60N03 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@20A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute M
me60n03 me60n03-g.pdf
ME60N03/ME60N03-G 30V N-Channel Enhancement Mode MOSFET -g GENERAL DESCRIPTION FEATURES The ME60N03 is the N-Channel logic enhancement mode power RDS(ON) 8.5m @VGS=10V field effect transistors are produced using high cell density DMOS RDS(ON) 13m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extre
Otros transistores... ME50N75T , ME50N75T-G , ME50P06 , ME50P06-G , ME55N06A , ME55N06A-G , ME60N03-G , ME60N03AS , IRF4905 , ME60P06T , ME60P06T-G , ME66N04T , ME6968ED , ME6968ED-G , ME6980ED , ME6980ED-G , ME7114S-G .
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