ME95N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME95N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 54.4 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 134 nC
Tiempo de subida (tr): 23 nS
Conductancia de drenaje-sustrato (Cd): 855 pF
Resistencia entre drenaje y fuente RDS(on): 0.0032 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET ME95N03
ME95N03 Datasheet (PDF)
me95n03 me95n03-g.pdf
ME95N03/ME95N03-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME95N03 is the N-Channel logic enhancement mode power RDS(ON)3.2m@VGS=10V field effect transistors are produced using high cell density DMOS RDS(ON)4.2m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD
me95n03t me95n03t-g.pdf
ME95N03T/ME95N03T-GN-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6m@VGS=10V The ME95N03T is the N-Channel logic enhancement mode power RDS(ON)9m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tail
me95n10f me95n10f-g.pdf
ME95N10F/ME95N10F-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)8.5m@VGS=10V The ME95N10F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process
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