KIA65R190 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KIA65R190
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 55 nS
Cossⓘ - Capacitancia de salida: 300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: TO220F
- Selección de transistores por parámetros
KIA65R190 Datasheet (PDF)
kia65r190.pdf

20A650V 65R190 N-CHANNEL MOSFET KIA KIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Description This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation
kia65r300.pdf

15A650V 65R300 N-CHANNEL MOSFET KIA KIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Description This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation
kia65r950.pdf

5A650V 65R950 N-CHANNEL MOSFET KIA KIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Description This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation m
kia65r700.pdf

7A650V 65R700 N-CHANNEL MOSFET KIA KIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Description This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation m
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IRFS41N15D | 2SK1336 | CSD17310Q5A | WSD4066DN | AOLF66610 | VS3618AE | PNMTO600V5
History: IRFS41N15D | 2SK1336 | CSD17310Q5A | WSD4066DN | AOLF66610 | VS3618AE | PNMTO600V5



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