KIA65R190 Todos los transistores

 

KIA65R190 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KIA65R190
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 70 nC
   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO220F

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KIA65R190 Datasheet (PDF)

 ..1. Size:591K  kia
kia65r190.pdf

KIA65R190
KIA65R190

20A650V 65R190 N-CHANNEL MOSFET KIA KIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Description This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation

 8.1. Size:380K  kia
kia65r300.pdf

KIA65R190
KIA65R190

15A650V 65R300 N-CHANNEL MOSFET KIA KIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Description This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation

 8.2. Size:726K  kia
kia65r950.pdf

KIA65R190
KIA65R190

5A650V 65R950 N-CHANNEL MOSFET KIA KIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Description This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation m

 8.3. Size:619K  kia
kia65r700.pdf

KIA65R190
KIA65R190

7A650V 65R700 N-CHANNEL MOSFET KIA KIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Description This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation m

 8.4. Size:569K  kia
kia65r420.pdf

KIA65R190
KIA65R190

11A650V 65R420 N-CHANNEL MOSFET KIA KIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Description This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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