KIA65R190 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KIA65R190
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 70 nC
trⓘ - Tiempo de subida: 55 nS
Cossⓘ - Capacitancia de salida: 300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET KIA65R190
KIA65R190 Datasheet (PDF)
kia65r190.pdf
20A650V 65R190 N-CHANNEL MOSFET KIA KIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Description This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation
kia65r300.pdf
15A650V 65R300 N-CHANNEL MOSFET KIA KIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Description This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation
kia65r950.pdf
5A650V 65R950 N-CHANNEL MOSFET KIA KIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Description This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation m
kia65r700.pdf
7A650V 65R700 N-CHANNEL MOSFET KIA KIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Description This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation m
kia65r420.pdf
11A650V 65R420 N-CHANNEL MOSFET KIA KIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Description This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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