KIA7N60H-262 Todos los transistores

 

KIA7N60H-262 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KIA7N60H-262
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 27 nC
   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO262

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KIA7N60H-262 Datasheet (PDF)

 6.1. Size:270K  kia
kia7n60h.pdf

KIA7N60H-262
KIA7N60H-262

7.0A,600VN-CHANNELMOSFET7N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation mode. Th

 7.1. Size:333K  kia
kia7n60u.pdf

KIA7N60H-262
KIA7N60H-262

7A600V7N60UN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFETis produced using KIAsemi`s advancedplanar stripeDMOStechnology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation mode. Th

 9.1. Size:190K  kia
kia7n80h.pdf

KIA7N60H-262
KIA7N60H-262

7A800V7N80HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFETis produced using SLsemi`s advanced planar stripeDMOStechnology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance,and withstand high energy pulse in the avalanche and commutation mode.Thes

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