KND3203B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KND3203B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 101 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.3 V
Carga de la puerta (Qg): 50 nC
Tiempo de subida (tr): 102 nS
Conductancia de drenaje-sustrato (Cd): 460 pF
Resistencia entre drenaje y fuente RDS(on): 0.004 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET KND3203B
KND3203B Datasheet (PDF)
knd3203b.pdf
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100A40VKNX3204AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features R =4m(typ.)@V =10VDS(ON),typ. GS Proprietary NewTrenchTechnology LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications DC-DCconverters DC-DCInverters Power Supply3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Drai
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