KND3204A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KND3204A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 137 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 51 nC
Tiempo de subida (tr): 60 nS
Conductancia de drenaje-sustrato (Cd): 425 pF
Resistencia entre drenaje y fuente RDS(on): 0.0045 Ohm
Paquete / Cubierta: TO252
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KND3204A Datasheet (PDF)
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100A40VKNX3204AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features R =4m(typ.)@V =10VDS(ON),typ. GS Proprietary NewTrenchTechnology LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications DC-DCconverters DC-DCInverters Power Supply3. PinconfigurationPinPin PinTO-252 FunctionTO-220 DFN5*6T
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100A40VKNX3204AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features R =4m(typ.)@V =10VDS(ON),typ. GS Proprietary NewTrenchTechnology LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications DC-DCconverters DC-DCInverters Power Supply3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Drai
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110A60VN-CHANNELMOSFETKNX3206AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =6.5m(typ)@V =10VDS(ON) GS LowR to Minimize Conductive LossDS(ON) LowGate Charge for Fast SwitchingApplication OptimizedB CapabilityVDSS2. Applications Power Supply DC-DCconverters3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Drain1of 7
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100A30VKNX3203BN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSEMICONDUCTORSS1. Features RDS(on)=3.1m@VGS=10V Uses CRM(CQ) advancedTrenchMOStechnology Extremely lowon-resistance R (on)DS Excellent QgxR (on) product(FOM)DS Qualifiedaccording toJEDECcriteria2. Applications Motor control anddrive Battery management UPS(Uninterrupible Power Suppli
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100A85VKNX3208AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewTrenchTechnology R =6.5m@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter3. PinconfigurationPin Function1 Gate2 D
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