KND3206A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

110A60VN-CHANNELMOSFETKNX3206AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =6.5m(typ)@V =10VDS(ON) GS LowR to Minimize Conductive LossDS(ON) LowGate Charge for Fast SwitchingApplication OptimizedB CapabilityVDSS2. Applications Power Supply DC-DCconverters3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Drain1of 7

100A40VKNX3204AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features R =4m(typ.)@V =10VDS(ON),typ. GS Proprietary NewTrenchTechnology LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications DC-DCconverters DC-DCInverters Power Supply3. PinconfigurationPinPin PinTO-252 FunctionTO-220 DFN5*6T

100A30VKNX3203BN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSEMICONDUCTORSS1. Features RDS(on)=3.1m@VGS=10V Uses CRM(CQ) advancedTrenchMOStechnology Extremely lowon-resistance R (on)DS Excellent QgxR (on) product(FOM)DS Qualifiedaccording toJEDECcriteria2. Applications Motor control anddrive Battery management UPS(Uninterrupible Power Suppli

100A40VKNX3204AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features R =4m(typ.)@V =10VDS(ON),typ. GS Proprietary NewTrenchTechnology LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications DC-DCconverters DC-DCInverters Power Supply3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Drai

100A85VKNX3208AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewTrenchTechnology R =6.5m@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter3. PinconfigurationPin Function1 Gate2 D