JCS12N60ST Todos los transistores

 

JCS12N60ST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JCS12N60ST
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 250 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 12 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 39 nC
   Tiempo de subida (tr): 133 nS
   Conductancia de drenaje-sustrato (Cd): 175 pF
   Resistencia entre drenaje y fuente RDS(on): 0.65 Ohm
   Paquete / Cubierta: TO-263

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JCS12N60ST Datasheet (PDF)

 ..1. Size:1207K  jilin sino
jcs12n60ct jcs12n60ft jcs12n60st jcs12n60bt.pdf

JCS12N60ST
JCS12N60ST

N RN-CHANNEL MOSFET JCS12N60T Package MAIN CHARACTERISTICS ID 12.0A VDSS 600 V Rdson-max 0.65 @Vgs=10V Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

 6.1. Size:1072K  jilin sino
jcs12n60t.pdf

JCS12N60ST
JCS12N60ST

N-CHANNEL MOSFETRJCS12N60T Package MAIN CHARACTERISTICS 12 A ID 600 V VDSS Rdson 0.65&! @Vgs=10V39nC Qg APPLICATIONS High efficiency switchmode power supplies El

 7.1. Size:1140K  1
jcs12n65t.pdf

JCS12N60ST
JCS12N60ST

N RN-CHANNEL MOSFETJCS12N65T Package MAIN CHARACTERISTICS ID 12 A VDSS 650 V Rdson@Vgs=10V 0.78 Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA

 7.2. Size:1489K  jilin sino
jcs12n65fei jcs12n65bei jcs12n65sei jcs12n65cei.pdf

JCS12N60ST
JCS12N60ST

N RN-CHANNEL MOSFET JCS12N65EI Package MAIN CHARACTERISTICS ID 12A VDSS 650V Rdson-max 0.9 Vgs=10V Qg-Typ 30nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

 7.3. Size:1410K  jilin sino
jcs12n65bt jcs12n65st jcs12n65ct jcs12n65ft.pdf

JCS12N60ST
JCS12N60ST

N R N-CHANNEL MOSFET JCS12N65T Package MAIN CHARACTERISTICS ID 12.0A VDSS 650 V Rdson-max 0.78 @Vgs=10V Qg-typ 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 7.4. Size:543K  jilin sino
jcs12n65f.pdf

JCS12N60ST
JCS12N60ST

N N- CHANNEL MOSFET RJCS12N65FC MAIN CHARACTERISTICS Package ID 12 A VDSS 650 V Rdson@Vgs=10V 0.52 Qg 30 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

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