JCS4N70V Todos los transistores

 

JCS4N70V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JCS4N70V
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 51 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 67 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: TO251

 Búsqueda de reemplazo de MOSFET JCS4N70V

 

JCS4N70V Datasheet (PDF)

 ..1. Size:2205K  jilin sino
jcs4n70v jcs4n70r jcs4n70mf jcs4n70s jcs4n70b jcs4n70c jcs4n70f.pdf

JCS4N70V JCS4N70V

N RN-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A VDSS 700 V Rdson-max 2.8 @Vgs=10V Qg-typ 16nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS T0-251N-S2 FEA

 ..2. Size:2742K  jilin sino
jcs4n70v jcs4n70r jcs4n70mf jcs4n70c jcs4n70f jcs4n70b jcs4n70s.pdf

JCS4N70V JCS4N70V

N RN-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A 700 V VDSS Rdson-max 2.8 Vgs=10V 16nC Qg-Typ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 9.1. Size:1019K  1
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60cb jcs4n60fb.pdf

JCS4N70V JCS4N70V

N RN-CHANNEL MOSFETJCS4N60B Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS RdsonVgs=10V 2.4 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 9.2. Size:1045K  jilin sino
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60sb jcs4n60cb jcs4n60fb.pdf

JCS4N70V JCS4N70V

N RN-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V 2.4 RdsonVgs=10VQg 18.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su

 9.3. Size:1321K  jilin sino
jcs4n80ch jcs4n80fh.pdf

JCS4N70V JCS4N70V

N RN-CHANNEL MOSFET JCS4N80H Package MAIN CHARACTERISTICS ID 4 A VDSS 800 V Rdson-max 2.5 @Vgs=10V Qg-typ 14nC APPLICATIONS High frequency switch mode power supply Electronic ballasts LED LED power supply

 9.4. Size:831K  jilin sino
jcs4n65vb jcs4n65rb jcs4n65cb jcs4n65fb.pdf

JCS4N70V JCS4N70V

N RN-CHANNEL MOSFETJCS4N65B Package MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson 2.5 @Vgs=10V13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 9.5. Size:1304K  jilin sino
jcs4n60v jcs4n60c jcs4n60f jcs4n60r jcs4n60b.pdf

JCS4N70V JCS4N70V

N RN-CHANNEL MOSFET JCS4N60C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson Typ 2.0 Vgs=10V Max 2.5 Qg-typ 17.5nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.6. Size:3308K  jilin sino
jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80b jcs4n80s.pdf

JCS4N70V JCS4N70V

N RN-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

 9.7. Size:1259K  jilin sino
jcs4n60f jcs4n60f jcs4n60v jcs4n60r jcs4n60b.pdf

JCS4N70V JCS4N70V

R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson_max 2.35 Vgs=10V Qg-typ 11.8nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low

 9.8. Size:1165K  jilin sino
jcs4n90va jcs4n90ra jcs4n90sa jcs4n90fa jcs4n90ca.pdf

JCS4N70V JCS4N70V

N RN-CHANNEL MOSFET JCS4N90A MAIN CHARACTERISTICS Package ID 4.0 A VDSS 900 V RdsonVgs=10V 3.3 -MAX Qg-Typ 14.7nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power suppli

 9.9. Size:1170K  jilin sino
jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80b.pdf

JCS4N70V JCS4N70V

N R N-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

 9.10. Size:948K  jilin sino
jcs4n60f.pdf

JCS4N70V JCS4N70V

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS4N60 \ Package ;NSpe MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson 2.5 @Vgs=10V27 nC Qg APPLICATIONS (u High efficiency switch

 9.11. Size:1447K  jilin sino
jcs4n65f jcs4n65v jcs4n65r jcs4n65b jcs4n65m jcs4n65mf.pdf

JCS4N70V JCS4N70V

R JCS4N65E JCS4N65E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_max 2.5 Vgs=10V Qg-typ 11.9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low gate

 9.12. Size:779K  jilin sino
jcs4n65f-c-r-v.pdf

JCS4N70V JCS4N70V

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS4N65C \ Package ;NSpe MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS RdsonVgs=10V 2.5 9nC Qg APPLICATIONS (u High frequency switching

 9.13. Size:1385K  jilin sino
jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80s jcs4n80b.pdf

JCS4N70V JCS4N70V

N RN-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

 9.14. Size:1598K  jilin sino
jcs4n65vb jcs4n65rb jcs4n65bb jcs4n65sb jcs4n65cb jcs4n65fb.pdf

JCS4N70V JCS4N70V

N RN-CHANNEL MOSFET JCS4N65B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 650 V RdsonVgs=10V 2.4 -Max Qg-Typ 16.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP

 9.15. Size:1866K  jilin sino
jcs4n65v jcs4n65r jcs4n65c jcs4n65f jcs4n65b jcs4n65m jcs4n65mf.pdf

JCS4N70V JCS4N70V

RJCS4N65C JCS4N65C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_Typ 2.1 Vgs=1Max 2.6 0V Qg-typ 14nC APPLICATIONS High frequency switchingmode power supply Electronic ballastLED LED power supply FEATURES Low g

 9.16. Size:1046K  jilin sino
jcs4n90fh jcs4n90rh jcs4n90vh.pdf

JCS4N70V JCS4N70V

N RN-CHANNEL MOSFET CSJ 4N90H Package MAIN CHARACTERISTICS ID 4 4 4A VDSS 900 V Rdson_max 5.5 Vgs=10V Qg-typ 7 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SWT20N50D

 

 
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History: SWT20N50D

JCS4N70V
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