JCS5N60R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: JCS5N60R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 51 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 9 nC
   trⓘ - Tiempo de subida: 75 nS
   Cossⓘ - Capacitancia de salida: 62 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET JCS5N60R

JCS5N60R Datasheet (PDF)

..1. Size:897K jilin sino
jcs5n60v jcs5n60r jcs5n60c jcs5n60f.pdf

N RN-CHANNEL MOSFET JCS5N60C Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V RdsonVgs=10V 2.5 Qg 9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES

0.1. Size:976K jilin sino
jcs5n60vb jcs5n60rb jcs5n60cb jcs5n60fb.pdf

N RN-CHANNEL MOSFET JCS5N60B Package MAIN CHARACTERISTICS ID 5.0 A VDSS 600 V 2.4 RdsonVgs=10VQg 13.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su

8.1. Size:581K jilin sino
jcs5n65fb.pdf

N RN-CHANNEL MOSFET JCS5N65FB MAIN CHARACTERISTICS ID 4.0 A VDSS 650 V Rdson-max 2.4 @Vgs=10V Qg-typ 13.3nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES

9.1. Size:2112K jilin sino
jcs5n50vt jcs5n50rt jcs5n50ct jcs5n50ft.pdf

N RN-CHANNEL MOSFET JCS5N50T Package MAIN CHARACTERISTICS 5 A ID 500 V VDSS Rdson-max 1.6 @Vgs=10V 15 nC Qg-typ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

9.2. Size:1627K jilin sino
jcs5n50.pdf

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS5N50T \ Package ;NSpe MAIN CHARACTERISTICS ID 5 A VDSS 500 V Rdson@Vgs=10V 1.6&! Qg 15 nC APPLICATIONS (u High efficiency switch _sQ5un

9.3. Size:2342K jilin sino
jcs5n50vc jcs5n50rc jcs5n50cc jcs5n50fc.pdf

N RN-CHANNEL MOSFET JCS5N50C Package MAIN CHARACTERISTICS 5 A ID 500 V VDSS RdsonVgs=10V 1.45 14nC Qg APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: