JCS5N60V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JCS5N60V
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 51 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 9 nC
Tiempo de subida (tr): 75 nS
Conductancia de drenaje-sustrato (Cd): 62 pF
Resistencia entre drenaje y fuente RDS(on): 2.5 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de MOSFET JCS5N60V
JCS5N60V Datasheet (PDF)
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jcs5n50.pdf
N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS5N50T \ Package ;NSpe MAIN CHARACTERISTICS ID 5 A VDSS 500 V Rdson@Vgs=10V 1.6&! Qg 15 nC APPLICATIONS (u High efficiency switch _sQ5un
jcs5n50vc jcs5n50rc jcs5n50cc jcs5n50fc.pdf
N RN-CHANNEL MOSFET JCS5N50C Package MAIN CHARACTERISTICS 5 A ID 500 V VDSS RdsonVgs=10V 1.45 14nC Qg APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
