JCS7N80BH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: JCS7N80BH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 195 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 39 nC
   trⓘ - Tiempo de subida: 105 nS
   Cossⓘ - Capacitancia de salida: 129 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: TO-262

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JCS7N80BH Datasheet (PDF)

..1. Size:1165K jilin sino
jcs7n80fh jcs7n80ch jcs7n80bh jcs7n80sh.pdf

N RN-CHANNEL MOSFET JCS7N80H Package MAIN CHARACTERISTICS ID 7A VDSS 800V Rdson-max 1.6 Vgs=10V Qg-Typ 39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED po

7.1. Size:667K jilin sino
jcs7n80fc.pdf

N R N-CHANNEL MOSFET JCS7N80C Package MAIN CHARACTERISTICS 7A ID 800 V VDSS Rdson-max 1.8 @Vgs=10VQg-typ 32nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

9.1. Size:1944K jilin sino
jcs7n70v jcs7n70r jcs7n70c jcs7n70f jcs7n70s jcs7n70b.pdf

N RN-CHANNEL MOSFET JCS7N70C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATUR

9.2. Size:755K jilin sino
jcs7n60s jcs7n60b jcs7n60c jcs7n60f.pdf

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N60 \ Package ;NSpe MAIN CHARACTERISTICS ID 7.0 A 600 V VDSS 1.2 &! Rdson@Vgs=10V54 nC Qg APPLICATIONS (u High efficiency switch

9.3. Size:887K jilin sino
jcs7n120aba jcs7n120wa.pdf

N RN-CHANNEL MOSFET JCS7N120A MAIN CHARACTERISTICS Package ID 7 A VDSS 1200 V RdsonVgs=10V 1.5 -MAX Qg-Typ 61.13 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power supp

9.4. Size:600K jilin sino
jcs7n65.pdf

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N65B ;NSpe MAIN CHARACTERISTICS \ Package ID 7.0 A 650 V VDSS 1.3 &! Rdson@Vgs=10V25 nC Qg APPLICATIONS (u High efficiency switch

9.5. Size:904K jilin sino
jcs7n60bb jcs7n60sb jcs7n60cb jcs7n60fb.pdf

N RN-CHANNEL MOSFET JCS7N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

9.6. Size:1105K jilin sino
jcs7n95fa jcs7n95ca jcs7n95sa jcs7n95aba.pdf

N RN-CHANNEL MOSFET JCS7N95A Package MAIN CHARACTERISTICS 7A ID 950 V VDSS Rdson-Max 1.5 @Vgs=10VQg-typ 42.48nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

9.7. Size:1774K jilin sino
jcs7n60v jcs7n60r jcs7n60f jcs7n60c jcs7n60b jcs7n60s.pdf

N RN-CHANNEL MOSFET JCS7N60E MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max1.0 @Vgs=10V Qg-typ 23 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

9.8. Size:757K jilin sino
jcs7n65bb jcs7n65sb jcs7n65cb jcs7n65fb.pdf

N RN-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS ID 7.0 A VDSS 650 V Package Rdson-max 1.3 (@Vgs=10V Qg-typ 25 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

9.9. Size:2018K jilin sino
jcs7n65ve jcs7n65re jcs7n65ce jcs7n65se jcs7n65be jcs7n65fe.pdf

N RN-CHANNEL MOSFET JCS7N65E MAIN CHARACTERISTICS Package ID 7.0 A VDSS 650 V Rdson-max1.1 @Vgs=10V Qg-typ 23 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

9.10. Size:1228K jilin sino
jcs7n70fe.pdf

N RN-CHANNEL MOSFET JCS7N70FE Package MAIN CHARACTERISTICS ID 7.0 A VDSS 700 V Rdson-max(@Vgs=10V) 1.35 Qg-typ 25.3 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES

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