KNP2803A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KNP2803A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 160 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 150 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 110 nC
Tiempo de subida (tr): 50 nS
Conductancia de drenaje-sustrato (Cd): 680 pF
Resistencia entre drenaje y fuente RDS(on): 0.003 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET KNP2803A
KNP2803A Datasheet (PDF)
knp2803a knb2803a knd2803a kny2803a.pdf
150A30VKNX2803AN-CHANNEL MOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =2.2mtyp.@ V =10VDS(on) GS Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant2. FeaturesKNX2803A designed by the trench processing techniques to achieve extremely l
knp2803a knb2803a knd2803a.pdf
150A30VKNX2803AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =2.2mtyp.@V =10VDS(on) GS LowOn-Resistance Fast Switching 100%AvalancheTested RepetitiveAvalancheAllowed up toTjmax Lead-Free, RoHSCompliant2. FeaturesKNX2803A designed by the trench processing techniques to achieve extremely low on-resistance.Addition
knp2804a knb2804a knd2804a.pdf
150A40VKNX2804AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewTrenchTechnology R =3.0m(typ.)@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter3. PinconfigurationPin Function1 Gat
knp2804c knb2804c.pdf
150A40VN-CHANNEL MOSFETKNX2804CKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =3.0m(typ.)@V =10VDS(ON),typ. GS Uses CRM(CQ) advanced Trench MOS technology Excellent QgxRDS(on) product(FOM) Extremely low on-resistance RDS(on)2. Application Motor control and drive Battery management UPS3. Pin configurationPin Func
knp2804c.pdf
150A40VN-CHANNELMOSFETKNX2804CKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =3.0m(typ.)@V =10VDS(ON),typ. GS Uses CRM(CQ) advancedTrench MOStechnology Excellent QgxRDS(on) product(FOM) Extremely lowon-resistance RDS(on)2. Application Motor control and drive Battery management UPS3. PinconfigurationPin Function1 Gate2 Drain3 S
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
