L2N7002SDW1T1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L2N7002SDW1T1G
Código: 701
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.32 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 VQgⓘ - Carga de la puerta: 0.44 nC
trⓘ - Tiempo de subida: 2.5 nS
Cossⓘ - Capacitancia de salida: 10(max) pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
Paquete / Cubierta: SOT363
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L2N7002SDW1T1G Datasheet (PDF)
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