S-L2N7002SWT1G Todos los transistores

 

S-L2N7002SWT1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: S-L2N7002SWT1G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.32 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.5 nS

Cossⓘ - Capacitancia de salida: 10 max pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm

Encapsulados: SOT323

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S-L2N7002SWT1G datasheet

 ..1. Size:393K  lrc
 l2n7002swt1g s-l2n7002swt1g.pdf pdf_icon

S-L2N7002SWT1G

L2N7002SWT1G S-L2N7002SWT1G Small Signal MOSFET 380 mAmps, 60 Volts N Channel SC-70 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. ESD protected Low R

 5.1. Size:570K  lrc
 l2n7002dw1t1g s-l2n7002dw1t1g.pdf pdf_icon

S-L2N7002SWT1G

L2N7002DW1T1G S-L2N7002DW1T1G Small Signal MOSFET 115 mAmps, 60V N Channel SC-88 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. ESD Protected 1000V 2. DE

 5.2. Size:524K  lrc
 l2n7002lt1g s-l2n7002lt1g.pdf pdf_icon

S-L2N7002SWT1G

L2N7002LT1G S-L2N7002LT1G Small Signal MOSFET 115 mAmps, 60 Volts N Channel SOT-23 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. ESD Protected 1000V 2.

 5.3. Size:167K  lrc
 l2n7002m3t5g s-l2n7002m3t5g.pdf pdf_icon

S-L2N7002SWT1G

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET L2N7002M3T5G 115 mAmps, 60 Volts S-L2N7002M3T5G N Channel SOT 723 3 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 1 ORDERING INFORMATION SOT-723 Device Marking Shipping L2N7002M3T5G 72 8000 Tap

MOSTRAR MÁS

Otros transistores... S-L2N7002LT1G , L2N7002M3T5G , S-L2N7002M3T5G , L2N7002SDW1T1G , L2N7002SDW1T3G , L2N7002SLT1G , L2N7002SLT3G , L2N7002SWT1G , IRFB4227 , S-L2SK3018WT1G , L2SK801LT1G , LBSS123LT1G , S-LBSS123LT1G , LBSS138LT1G , S-LBSS138LT1G , LBSS138WT1G , S-LBSS138WT1G .

History: S10H18RP | PTW69N30 | NTD4965N | JCS4N60FB | WMM28N60F2 | APM9988QB | 2SK1356

 

 

 

 

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