S-L2N7002SWT1G Todos los transistores

 

S-L2N7002SWT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: S-L2N7002SWT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.5 nS
   Cossⓘ - Capacitancia de salida: 10(max) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: SOT323
 

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S-L2N7002SWT1G Datasheet (PDF)

 ..1. Size:393K  lrc
 l2n7002swt1g s-l2n7002swt1g.pdf pdf_icon

S-L2N7002SWT1G

L2N7002SWT1GS-L2N7002SWT1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.ESD protectedLow R

 5.1. Size:570K  lrc
 l2n7002dw1t1g s-l2n7002dw1t1g.pdf pdf_icon

S-L2N7002SWT1G

L2N7002DW1T1GS-L2N7002DW1T1GSmall Signal MOSFET115 mAmps, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected:1000V2. DE

 5.2. Size:524K  lrc
 l2n7002lt1g s-l2n7002lt1g.pdf pdf_icon

S-L2N7002SWT1G

L2N7002LT1GS-L2N7002LT1GSmall Signal MOSFET115 mAmps, 60 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD Protected:1000V2.

 5.3. Size:167K  lrc
 l2n7002m3t5g s-l2n7002m3t5g.pdf pdf_icon

S-L2N7002SWT1G

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002M3T5G115 mAmps, 60 VoltsS-L2N7002M3T5GNChannel SOT7233 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.21ORDERING INFORMATIONSOT-723Device Marking ShippingL2N7002M3T5G72 8000 Tap

MOSTRAR MÁS

Otros transistores... S-L2N7002LT1G , L2N7002M3T5G , S-L2N7002M3T5G , L2N7002SDW1T1G , L2N7002SDW1T3G , L2N7002SLT1G , L2N7002SLT3G , L2N7002SWT1G , AON6414A , S-L2SK3018WT1G , L2SK801LT1G , LBSS123LT1G , S-LBSS123LT1G , LBSS138LT1G , S-LBSS138LT1G , LBSS138WT1G , S-LBSS138WT1G .

History: P4004ED | SSM6K06FU | LNND04R120

 

 
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