LBSS138LT1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LBSS138LT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.225 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 12 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
Encapsulados: SOT23
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LBSS138LT1G datasheet
lbss138lt1g s-lbss138lt1g.pdf
LESHAN RADIO COMPANY, LTD. Power MOSFET LBSS138LT1G 200 mAmps, 50 Volts S-LBSS138LT1G N Channel SOT 23 3 Typical applications are dc dc converters, power management in portable and battery powered products such as computers, printers, 1 PCMCIA cards, cellular and cordless telephones. 2 Low Threshold Voltage (V GS(th) 0.5V...1.5V) makes it ideal for low voltage applicat
lbss138wt1g s-lbss138wt1g.pdf
LBSS138WT1G S-LBSS138WT1G Power MOSFET 200 mAmps, 50 Volts N Channel SC-70 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Low threshold voltage (VGS(th)
lbss139lt1g lbss139lt3g.pdf
LBSS139LT1G S-LBSS139LT1G Power MOSFET 200 mAmps, 50 Volts N Channel SOT-23 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. Low threshold voltage (VGS(th)
lbss139dw1t1g lbss139dw1t3g.pdf
LBSS139DW1T1G S-LBSS139DW1T1G Power MOSFET 200 mAmps, 50 Volts N Channel SC-88 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low threshold voltage (VGS(t
Otros transistores... L2N7002SLT1G , L2N7002SLT3G , L2N7002SWT1G , S-L2N7002SWT1G , S-L2SK3018WT1G , L2SK801LT1G , LBSS123LT1G , S-LBSS123LT1G , 2N7000 , S-LBSS138LT1G , LBSS138WT1G , S-LBSS138WT1G , LBSS139DW1T1G , LBSS139DW1T3G , LBSS139LT1G , LBSS139LT3G , LBSS260DW1T1G .
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