S-LBSS138LT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: S-LBSS138LT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.225 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 12 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
Paquete / Cubierta: SOT23
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S-LBSS138LT1G Datasheet (PDF)
lbss138lt1g s-lbss138lt1g.pdf
LESHAN RADIO COMPANY, LTD.Power MOSFETLBSS138LT1G200 mAmps, 50 Volts S-LBSS138LT1GNChannel SOT233Typical applications are dcdc converters, power management inportable and batterypowered products such as computers, printers,1PCMCIA cards, cellular and cordless telephones.2 Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for lowvoltage applicat
lbss138wt1g s-lbss138wt1g.pdf
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lbss84wt1g s-lbss84wt1g.pdf
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lbss84lt1g s-lbss84lt1g.pdf
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lbss84dw1t1g s-lbss84dw1t1g.pdf
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