S-LBSS138WT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: S-LBSS138WT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 12 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
Paquete / Cubierta: SOT323
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S-LBSS138WT1G Datasheet (PDF)
lbss138wt1g s-lbss138wt1g.pdf

LBSS138WT1GS-LBSS138WT1GPower MOSFET200 mAmps, 50 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Low threshold voltage (VGS(th):
lbss138lt1g s-lbss138lt1g.pdf

LESHAN RADIO COMPANY, LTD.Power MOSFETLBSS138LT1G200 mAmps, 50 Volts S-LBSS138LT1GNChannel SOT233Typical applications are dcdc converters, power management inportable and batterypowered products such as computers, printers,1PCMCIA cards, cellular and cordless telephones.2 Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for lowvoltage applicat
lbss123lt1g s-lbss123lt1g.pdf

LESHAN RADIO COMPANY, LTD.N-CHANNEL POWER MOSFETLBSS123LT1GLBSS123LT1GS-LBSS123LT1GFEATURE3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.1DEVICE MARKING AND ORDERING INFORMATION2SOT-23Device Marking Shipping LBSS123LT1G3000/Tape&ReelSA
lbss260dw1t1g s-lbss260dw1t1g.pdf

LBSS260DW1T1GS-LBSS260DW1T1GN-Channel 60-V Power Mosfet1. FEATURESHigh speed switchESD protectedWe declare that the material of product compliance withRoHS requirements and Halogen Free.SC88(SOT-363)S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.2. APPLICATION
Otros transistores... S-L2N7002SWT1G , S-L2SK3018WT1G , L2SK801LT1G , LBSS123LT1G , S-LBSS123LT1G , LBSS138LT1G , S-LBSS138LT1G , LBSS138WT1G , STP75NF75 , LBSS139DW1T1G , LBSS139DW1T3G , LBSS139LT1G , LBSS139LT3G , LBSS260DW1T1G , S-LBSS260DW1T1G , LBSS8402DW1T1G , S-LBSS8402DW1T1G .
History: 2SK1524 | IPA041N04NG | BRCS070N03DP | PMPB48EP | CJQ9435 | 2N7002TC
History: 2SK1524 | IPA041N04NG | BRCS070N03DP | PMPB48EP | CJQ9435 | 2N7002TC



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