S-LBSS138WT1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: S-LBSS138WT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 12 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
Encapsulados: SOT323
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S-LBSS138WT1G datasheet
lbss138wt1g s-lbss138wt1g.pdf
LBSS138WT1G S-LBSS138WT1G Power MOSFET 200 mAmps, 50 Volts N Channel SC-70 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Low threshold voltage (VGS(th)
lbss138lt1g s-lbss138lt1g.pdf
LESHAN RADIO COMPANY, LTD. Power MOSFET LBSS138LT1G 200 mAmps, 50 Volts S-LBSS138LT1G N Channel SOT 23 3 Typical applications are dc dc converters, power management in portable and battery powered products such as computers, printers, 1 PCMCIA cards, cellular and cordless telephones. 2 Low Threshold Voltage (V GS(th) 0.5V...1.5V) makes it ideal for low voltage applicat
lbss123lt1g s-lbss123lt1g.pdf
LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G S-LBSS123LT1G FEATURE 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 DEVICE MARKING AND ORDERING INFORMATION 2 SOT-23 Device Marking Shipping LBSS123LT1G 3000/Tape&Reel SA
lbss260dw1t1g s-lbss260dw1t1g.pdf
LBSS260DW1T1G S-LBSS260DW1T1G N-Channel 60-V Power Mosfet 1. FEATURES High speed switch ESD protected We declare that the material of product compliance with RoHS requirements and Halogen Free. SC88(SOT-363) S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATION
Otros transistores... S-L2N7002SWT1G , S-L2SK3018WT1G , L2SK801LT1G , LBSS123LT1G , S-LBSS123LT1G , LBSS138LT1G , S-LBSS138LT1G , LBSS138WT1G , 7N65 , LBSS139DW1T1G , LBSS139DW1T3G , LBSS139LT1G , LBSS139LT3G , LBSS260DW1T1G , S-LBSS260DW1T1G , LBSS8402DW1T1G , S-LBSS8402DW1T1G .
History: APT30M36LFLL | AGM612MNA | TPW4R50ANH
History: APT30M36LFLL | AGM612MNA | TPW4R50ANH
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