S-LBSS138WT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: S-LBSS138WT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 12 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
Paquete / Cubierta: SOT323
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S-LBSS138WT1G Datasheet (PDF)
lbss138wt1g s-lbss138wt1g.pdf
LBSS138WT1GS-LBSS138WT1GPower MOSFET200 mAmps, 50 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Low threshold voltage (VGS(th):
lbss138lt1g s-lbss138lt1g.pdf
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lbss260dw1t1g s-lbss260dw1t1g.pdf
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lbss84wt1g s-lbss84wt1g.pdf
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lbss84lt1g s-lbss84lt1g.pdf
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LBSS84ELT1GS-LBSS84ELT1GPower MOSFET 60V PChannel1. FEATURESAdvanced trench cell design.High speed switch.G-S ESD Protected: 1000VPb-Free Package is available.We declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change re
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