LBSS139DW1T3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LBSS139DW1T3G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.38 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 3.5 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
Encapsulados: SOT363
Búsqueda de reemplazo de LBSS139DW1T3G MOSFET
- Selecciónⓘ de transistores por parámetros
LBSS139DW1T3G datasheet
lbss139dw1t1g lbss139dw1t3g.pdf
LBSS139DW1T1G S-LBSS139DW1T1G Power MOSFET 200 mAmps, 50 Volts N Channel SC-88 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low threshold voltage (VGS(t
lbss139lt1g lbss139lt3g.pdf
LBSS139LT1G S-LBSS139LT1G Power MOSFET 200 mAmps, 50 Volts N Channel SOT-23 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. Low threshold voltage (VGS(th)
lbss139lt1g.pdf
LBSS139LT1G www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G
lbss138wt1g s-lbss138wt1g.pdf
LBSS138WT1G S-LBSS138WT1G Power MOSFET 200 mAmps, 50 Volts N Channel SC-70 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Low threshold voltage (VGS(th)
Otros transistores... L2SK801LT1G , LBSS123LT1G , S-LBSS123LT1G , LBSS138LT1G , S-LBSS138LT1G , LBSS138WT1G , S-LBSS138WT1G , LBSS139DW1T1G , IRF630 , LBSS139LT1G , LBSS139LT3G , LBSS260DW1T1G , S-LBSS260DW1T1G , LBSS8402DW1T1G , S-LBSS8402DW1T1G , LBSS84DW1T1G , S-LBSS84DW1T1G .
History: DH012N03I | SM1F08NSU | SLF65R180E7C | SLD60N04TB | STF4N90K5
History: DH012N03I | SM1F08NSU | SLF65R180E7C | SLD60N04TB | STF4N90K5
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASU70R600E | ASU65R850E | ASU65R550E | ASU65R350E | ASR65R120EFD | ASR65R046EFD | ASQ65R046EFD | ASM65R280E | ASM60R330E | ASE70R950E | ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E
Popular searches
2n1305 | 2sc5242 | irf540 equivalent | mp1620 transistor equivalent | 2sc945 transistor | c2073 transistor | ac176 transistor | mpsa20
