SLU65R420S2 Todos los transistores

 

SLU65R420S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLU65R420S2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 87 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 37 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO251
 

 Búsqueda de reemplazo de SLU65R420S2 MOSFET

   - Selección ⓘ de transistores por parámetros

 

SLU65R420S2 Datasheet (PDF)

 ..1. Size:518K  maple semi
sld65r420s2 slu65r420s2.pdf pdf_icon

SLU65R420S2

SLD65R420S2/SLU65R420S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 650V, RDS(on)typ= 0.33@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 23nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingpe

 8.1. Size:982K  maple semi
sld65r700s2 slu65r700s2.pdf pdf_icon

SLU65R420S2

SLD65R700S2/SLU65R700S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 650V, RDS(on)typ= 0.55@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 16nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper

Otros transistores... SLU5N50S2 , SLD5N65S , SLU5N65S , SLD60R380S2 , SLU60R380S2 , SLD60R650S2 , SLU60R650S2 , SLD65R420S2 , AO4407 , SLD65R700S2 , SLU65R700S2 , SLD65R950S2 , SLD70R420S2 , SLU70R420S2 , SLD70R600S2 , SLU70R600S2 , SLD70R900S2 .

History: IPA65R065C7 | NVMFS6B14NL | SUU10P10-195

 

 
Back to Top

 


 
.