SLD70R900S2 Todos los transistores

 

SLD70R900S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLD70R900S2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 58 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 26.3 nS
   Cossⓘ - Capacitancia de salida: 21 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

SLD70R900S2 Datasheet (PDF)

 ..1. Size:710K  maple semi
 sld70r900s2 slf70r900s2.pdf pdf_icon

SLD70R900S2

SLD70R900S2 / SLF70R900S2700V N-Channel Power MOSFET General Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 700V, RDS(on) typ. = 0.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Extended Safe Operating AreaThis advanced technology has been especially tailored to - Ease of Parallelingminimize on-state resistance, provide superior switching - Fas

 8.1. Size:789K  maple semi
 sld70r420s2 slu70r420s2.pdf pdf_icon

SLD70R900S2

SLD70R420S2/SLU70R420S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 11A, 700V, RDS(on)typ= 0.37@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 24nC)This advanced technology has been especially tailored to - High ruggednessminimize conduction loss, provide superior switching - Fast switc

 8.2. Size:443K  maple semi
 sld70r600s2 slu70r600s2.pdf pdf_icon

SLD70R900S2

SLD70R600S2/SLU70R600S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 700V, RDS(on)typ= 0.52@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 18nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: PD628BA | WMQ46N03T1 | RJK0629DPK | 2SK2907-01 | FDB6690S | RUH1H130S | NCEP070N10GU

 

 
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