SLD80R500SJ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SLD80R500SJ  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm

Encapsulados: TO252

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SLD80R500SJ datasheet

 ..1. Size:626K  maple semi
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SLD80R500SJ

SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ 800V N-Channel MOSFET Features General Description Features -11A, 800V, RDS(on) typ.= 0.46 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been

 8.1. Size:614K  maple semi
 sld80r850sj slu80r850sj slp80r850sj slf80r850sj slb80r850sj sli80r850sj.pdf pdf_icon

SLD80R500SJ

SLD80R850SJ,SLU80R850SJ,SLP80R850SJ SLF80R850SJ, SLB80R850SJ, SLI80R850SJ 800V N-Channel MOSFET Features General Description Features -7A, 800V, RDS(on) typ.= 0.8 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 25nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been es

 8.2. Size:1048K  maple semi
 sld80r380sj slu80r380sj slp80r380sj slf80r380sj slb80r380sj sli80r380sj.pdf pdf_icon

SLD80R500SJ

SLD80R380SJ,SLU80R380SJ,SLP80R380SJ SLF80R380SJ, SLB80R380SJ, SLI80R380SJ 800V N-Channel MOSFET Features General Description Features -15A, 800V, RDS(on) typ.= 0.34 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been

 9.1. Size:4793K  maple semi
 sld80n02tb.pdf pdf_icon

SLD80R500SJ

SLD80N02TB 20V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 71A, 20V, RDS(on),Typ = 3.6m TRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 30nC) pecially tailored to minimize conduction loss, provide superior Fast switching switching performance, and withstand high energy pulse in t

MOSTRAR MÁS

Otros transistores... SLF70R900S2, SLD740UZ, SLD80R380SJ, SLU80R380SJ, SLP80R380SJ, SLF80R380SJ, SLB80R380SJ, SLI80R380SJ, AO3407, SLU80R500SJ, SLP80R500SJ, SLF80R500SJ, SLB80R500SJ, SLI80R500SJ, SLD80R850SJ, SLU80R850SJ, SLP80R850SJ