SLF10N65A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SLF10N65A 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 138 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
Encapsulados: TO220F
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SLF10N65A datasheet
slp10n65a slf10n65a.pdf
LEAD FREE Pb RoHS SLP10N65A/SLF10N65A 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on)Typ = 0.745 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 19nC) This advanced technology has been especially tailored - Low Crss ( typical 5.3pF) to minimize on-state resistance, provide superi
slp10n65c slf10n65c.pdf
SLP10N65C / SLF10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on) typ. = 0.678 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 38nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchi
slp10n65s slf10n65s.pdf
LEAD FREE Pb RoHS SLP10N65S/ SLF10N65S 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on) typ=0.8 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switchi
slf10n65sv.pdf
SLF10N65SV 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 10A*, 650V, RDS(on),typ =0.81 planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 27nC) has been especially tailored to minimize conduction loss, pro- Fast switching vide superior switching performance, and withstand high en-
Otros transistores... SLF60R650S2, SLF65R300S2, SLF65R700S2, SLF65R950S2, SLH60R080SS, SLP10N60C, SLF10N60C, SLP10N65A, MMIS60R580P, SLP10N65C, SLF10N65C, SLP10N65S, SLF10N65S, SLP12N60C, SLF12N60C, SLP12N65C, SLF12N65C
History: IXFN100N10S2 | SLP50R140SJ | NTMFS4937NT1G
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