SLP10N65S Todos los transistores

 

SLP10N65S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLP10N65S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 156 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 41 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.95 Ohm
   Paquete / Cubierta: TO220
 

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SLP10N65S Datasheet (PDF)

 ..1. Size:666K  maple semi
 slp10n65s slf10n65s.pdf pdf_icon

SLP10N65S

LEAD FREEPbRoHSSLP10N65S/ SLF10N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ=0.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switchi

 6.1. Size:1189K  maple semi
 slp10n65c slf10n65c.pdf pdf_icon

SLP10N65S

SLP10N65C / SLF10N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ. = 0.678@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 38nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

 6.2. Size:978K  maple semi
 slp10n65a slf10n65a.pdf pdf_icon

SLP10N65S

LEAD FREEPbRoHSSLP10N65A/SLF10N65A650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on)Typ = 0.745@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 19nC)This advanced technology has been especially tailored - Low Crss ( typical 5.3pF)to minimize on-state resistance, provide superi

 7.1. Size:1218K  maple semi
 slp10n60c slf10n60c.pdf pdf_icon

SLP10N65S

SLP10N60C / SLF10N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 600V, RDS(on)typ. = 0.62@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 36.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

MOSTRAR MÁS

Otros transistores... SLF65R950S2 , SLH60R080SS , SLP10N60C , SLF10N60C , SLP10N65A , SLF10N65A , SLP10N65C , SLF10N65C , AO4468 , SLF10N65S , SLP12N60C , SLF12N60C , SLP12N65C , SLF12N65C , SLP13N50A , SLF13N50A , SLP13N50C .

History: AO4484 | AP6N1R7CDT | VP3203N3 | GP2M007A065XG | SPI21N50C3 | BSC080N03LS | AP4501AGEM-HF

 

 
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