SLF70R600S2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SLF70R600S2  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 27 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO220F

  📄📄 Copiar 

 Búsqueda de reemplazo de SLF70R600S2 MOSFET

- Selecciónⓘ de transistores por parámetros

 

SLF70R600S2 datasheet

 ..1. Size:495K  maple semi
 slp70r600s2 slf70r600s2.pdf pdf_icon

SLF70R600S2

SLP70R600S2/SLF70R600S2 700V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 700V, RDS(on)typ= 0.52 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 18nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching per

 8.1. Size:2508K  maple semi
 slf70r380e7c.pdf pdf_icon

SLF70R600S2

SLF70R380E7C 700V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A*, 700V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 24nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch

 8.2. Size:737K  maple semi
 slp70r420s2 slf70r420s2.pdf pdf_icon

SLF70R600S2

SLP70R420S2/SLF70R420S2 700V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 11A, 700V, RDS(on)typ= 0.37 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 24nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switc

 8.3. Size:2512K  maple semi
 slf70r280e7c.pdf pdf_icon

SLF70R600S2

SLF70R280E7C 700V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 14A*, 700V, RDS(on),Typ = 230m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch

MOSTRAR MÁS

Otros transistores... SLF60R380S2, SLP60R850S2, SLF60R850S2, SLP65R420S2, SLF65R420S2, SLP70R420S2, SLF70R420S2, SLP70R600S2, 4435, SLP740UZ, SLF740UZ, SLP7N60C, SLF7N60C, SLP7N65C, SLF7N65C, SLP7N70C, SLF7N70C