SLF70R600S2 Todos los transistores

 

SLF70R600S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLF70R600S2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 35 W
   Voltaje máximo drenador - fuente |Vds|: 700 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 7 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 18 nC
   Tiempo de subida (tr): 28 nS
   Conductancia de drenaje-sustrato (Cd): 27 pF
   Resistencia entre drenaje y fuente RDS(on): 0.6 Ohm
   Paquete / Cubierta: TO220F

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SLF70R600S2 Datasheet (PDF)

 ..1. Size:495K  maple semi
slp70r600s2 slf70r600s2.pdf

SLF70R600S2 SLF70R600S2

SLP70R600S2/SLF70R600S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 700V, RDS(on)typ= 0.52@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 18nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper

 8.1. Size:737K  maple semi
slp70r420s2 slf70r420s2.pdf

SLF70R600S2 SLF70R600S2

SLP70R420S2/SLF70R420S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 11A, 700V, RDS(on)typ= 0.37@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 24nC)This advanced technology has been especially tailored to - High ruggednessminimize conduction loss, provide superior switching - Fast switc

 8.2. Size:710K  maple semi
sld70r900s2 slf70r900s2.pdf

SLF70R600S2 SLF70R600S2

SLD70R900S2 / SLF70R900S2700V N-Channel Power MOSFET General Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 700V, RDS(on) typ. = 0.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Extended Safe Operating AreaThis advanced technology has been especially tailored to - Ease of Parallelingminimize on-state resistance, provide superior switching - Fas

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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