SLF70R600S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SLF70R600S2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28 nS
Cossⓘ - Capacitancia de salida: 27 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO220F
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SLF70R600S2 Datasheet (PDF)
slp70r600s2 slf70r600s2.pdf

SLP70R600S2/SLF70R600S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 700V, RDS(on)typ= 0.52@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 18nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper
slf70r380e7c.pdf

SLF70R380E7C700V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A*, 700V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 24nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch
slp70r420s2 slf70r420s2.pdf

SLP70R420S2/SLF70R420S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 11A, 700V, RDS(on)typ= 0.37@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 24nC)This advanced technology has been especially tailored to - High ruggednessminimize conduction loss, provide superior switching - Fast switc
slf70r280e7c.pdf

SLF70R280E7C700V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 14A*, 700V, RDS(on),Typ = 230mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch
Otros transistores... SLF60R380S2 , SLP60R850S2 , SLF60R850S2 , SLP65R420S2 , SLF65R420S2 , SLP70R420S2 , SLF70R420S2 , SLP70R600S2 , AON7410 , SLP740UZ , SLF740UZ , SLP7N60C , SLF7N60C , SLP7N65C , SLF7N65C , SLP7N70C , SLF7N70C .
History: IRF7811AV | IPP070N08N3 | MS40N06 | SSF65R260S2E | 2SK2432 | SQM50N04-4M1 | BUZ40B
History: IRF7811AV | IPP070N08N3 | MS40N06 | SSF65R260S2E | 2SK2432 | SQM50N04-4M1 | BUZ40B



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