SLP80R240SJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SLP80R240SJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 205 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm

Encapsulados: TO220

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SLP80R240SJ datasheet

 ..1. Size:634K  maple semi
 slp80r240sj slf80r240sj slb80r240sj.pdf pdf_icon

SLP80R240SJ

SLB/F/P80R240SJ 800V N-Channel MOSFET Features General Description Features - 20A, 800V, RDS(on) typ.= 0.22 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 70nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailored - High ruggedness - Low gate charge ( ty

 8.1. Size:614K  maple semi
 sld80r850sj slu80r850sj slp80r850sj slf80r850sj slb80r850sj sli80r850sj.pdf pdf_icon

SLP80R240SJ

SLD80R850SJ,SLU80R850SJ,SLP80R850SJ SLF80R850SJ, SLB80R850SJ, SLI80R850SJ 800V N-Channel MOSFET Features General Description Features -7A, 800V, RDS(on) typ.= 0.8 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 25nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been es

 8.2. Size:626K  maple semi
 sld80r500sj slu80r500sj slp80r500sj slf80r500sj slb80r500sj sli80r500sj.pdf pdf_icon

SLP80R240SJ

SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ 800V N-Channel MOSFET Features General Description Features -11A, 800V, RDS(on) typ.= 0.46 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been

 8.3. Size:1048K  maple semi
 sld80r380sj slu80r380sj slp80r380sj slf80r380sj slb80r380sj sli80r380sj.pdf pdf_icon

SLP80R240SJ

SLD80R380SJ,SLU80R380SJ,SLP80R380SJ SLF80R380SJ, SLB80R380SJ, SLI80R380SJ 800V N-Channel MOSFET Features General Description Features -15A, 800V, RDS(on) typ.= 0.34 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been

MOSTRAR MÁS

Otros transistores... SLP7N60C, SLF7N60C, SLP7N65C, SLF7N65C, SLP7N70C, SLF7N70C, SLP7N80C, SLF7N80C, IRF530, SLF80R240SJ, SLB80R240SJ, SLP8N60C, SLF8N60C, SLP8N65C, SLF8N65C, SLW18N50C, SLW20N50C