LP2309LT1G Todos los transistores

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 lp2309lt1g lp2309lt3g.pdf

LP2309LT1G P-Channel 60V (D-S) MOSFET 1. FEATURES RDS(ON) 215m , Vgs@-10V. RDS(ON) 260m , Vgs@-4.5V. Super high density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT23(TO-236) We declare that the material of product compliance with RoHS requirements and Halogen Free. 2. APPLICATIONS Power Man

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 lp2307lt1g.pdf

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 lp2305lt1g.pdf

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 lp2301alt1g.pdf

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES RDS(ON) 110m @VGS=-4.5V LP2301ALT1G RDS(ON) 150m @VGS=-2.5V Super high density cell design for extremely low RDS(ON) 3 APPLICATIONS 1 Power Management in Note book 2 Portable Equipment SOT 23 Battery Powered System Load Switch DSC 3 Ordering Inform

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 lp2305dslt1g s-lp2305dslt1g.pdf

LESHAN RADIO COMPANY, LTD. 12V P-Channel Enhancement-Mode MOSFET LP2305DSLT1G V = -12V DS S-LP2305DSLT1G RDS(ON), Vgs@-4.5V, Ids@" 3.5A = 68m R 3A = 81 DS(ON), Vgs@-2.5V, Ids@" m R 2A = 118 m DS(ON), Vgs@-1.8V, Ids@" 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 SOT 23 (TO 236AB) Fully Characterized Avalan

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 lp2301lt1g.pdf

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 lp2307lt1g s-lp2307lt1g.pdf

LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET LP2307LT1G VDS= -16V S-LP2307LT1G R Vgs@-4.5V, Ids@-4.7A = 70 m DS(ON), m R DS(ON), Vgs@-2.5V, Ids@-1.0A = 110 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 S- Prefix for Automotive and Other Applications Requiring SOT 23 (TO 236AB) Unique S

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 lp2301blt1g lp2301blt3g.pdf

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301BLT1G V = -20V DS R Vgs@-4.5V, Ids@-2.8A = 100 m DS(ON), m 3 RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 Fully Characterized Avalanche Voltage and Current SOT 23 (TO 236AB) Improved Shoot-Through FOM

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 lp2305dslt1g.pdf

LESHAN RADIO COMPANY, LTD. 8V P-Channel Enhancement-Mode MOSFET V = -8V DS LP2305DSLT1G RDS(ON), Vgs@-4.5V, Ids@" 3.5A = 58m R 3A = 71 DS(ON), Vgs@-2.5V, Ids@" m R 2A = 108 m DS(ON), Vgs@-1.8V, Ids@" 3 Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance SOT 23 (TO 236AB) Fully Characterized Avalanche Voltage and