5N65D Todos los transistores

 ..1. Size:1255K  jh
 5n65 5n65f 5n65d 5n65e 5n65m 5n65n.pdf

R 5N65 5N65F 5N65D 5N65E 5N65M 5N65N S E M I C O N D U C T O R 650V N-Channel Power MOSFET FEATURES PRODUCT SUMMARY RDS(ON)

 0.1. Size:257K  st
 stw35n65dm2.pdf

STW35N65DM2 Datasheet N-channel 650 V, 93 m typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 package Features VDS RDS(on) max. ID Order code STW35N65DM2 650 V 110 m 32 A Fast-recovery body diode 3 Extremely low gate charge and input capacitance 2 1 Low on-resistance 100% avalanche tested TO-247 Extremely high dv/dt ruggedness Zener-protected D(2, TAB

 0.2. Size:389K  st
 stw65n65dm2ag.pdf

STW65N65DM2AG Automotive-grade N-channel 650 V, 0.042 typ., 60 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW65N65DM2AG 650 V 0.05 60 A 446 W Designed for automotive applications and 3 AEC-Q101 qualified 2 Fast-recovery body diode 1 Extremely low gate charge and inpu

 0.3. Size:482K  kec
 kf5n65d-i.pdf

KF5N65D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N65D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 el

 0.4. Size:562K  silan
 svf5n65d svf5n65f.pdf

SVF5N65D/F 5A 650V N 2 SVF5N65D/F N MOS F-CellTM VDMOS 1 3 1. 2. 3.

 0.5. Size:392K  silan
 svf5n65dtr svf5n65f.pdf

SVF5N65D/F 5A 650V N 2 SVF5N65D/F N MOS F-CellTM VDMOS 1 3 1. 2. 3.

 0.6. Size:453K  silan
 svs5n65fd2 svs5n65dd2tr svs5n65fjhd2.pdf

 0.7. Size:768K  oriental semi
 ost15n65drf.pdf

OST15N65DRF Enhancement Mode N-Channel Power IGBT General Description OST15N65DRF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 0.8. Size:742K  samwin
 swf15n65d.pdf

SW15N65D N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS 650V Features ID 15A High ruggedness RDS(ON) 0.57 Low RDS(ON) (Typ 0.57 )@VGS=10V Low Gate Charge (Typ 57nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 General Description This pow

 0.9. Size:742K  samwin
 sw15n65d swf15n65d.pdf

SW15N65D N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS 650V Features ID 15A High ruggedness RDS(ON) 0.57 Low RDS(ON) (Typ 0.57 )@VGS=10V Low Gate Charge (Typ 57nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 General Description This pow

 0.10. Size:441K  convert
 cs5n65f cs5n65p cs5n65u cs5n65d.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS5N65F, CS5N65P, CS5N65U, CS5N65D 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS5N65F TO-2

 0.11. Size:1029K  cn hmsemi
 hms25n65 hms25n65d hms25n65f.pdf

HMS25N65/HMS25N65D/HMS25N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 115 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind

 0.12. Size:952K  cn hmsemi
 hms15n65 hms15n65f hms15n65d.pdf

HMS15N65D, HMS15N65, HMS15N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industry s ID 15 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap

 0.13. Size:591K  cn fx-semi
 fxn5n65d.pdf

FuXin Semiconductor Co., Ltd. FXN5N65D Series Rev.A General Description Features The FXN5N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 5A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria