LNC4N65 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LNC4N65  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 77 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 31 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.7 Ohm

Encapsulados: TO-220

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LNC4N65 datasheet

 ..1. Size:1098K  lonten
 lnc4n65 lnd4n65 lng4n65 lnh4n65 lnf4n65.pdf pdf_icon

LNC4N65

LNC4N65 LND4N65 LNG4N65 LNH4N65 LNF4N65 Lonten N-channel 650V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.70 superior switching performance and high Qg,typ 12 nC avalance energy. Features Low RDS(on) Low gate

 8.1. Size:1293K  lonten
 lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf pdf_icon

LNC4N65

LNC4N60 LND4N60 LNG4N60 LNH4N60 LNF4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 600V DSS advanced planar VDMOS technology. The I 4A D resulting device has low conduction resistance, R 2.4 DS(on),max superior switching performance and high avalance Q 12.8 nC g,typ energy. Features Low R DS(on) Low gate

 8.2. Size:1028K  lonten
 lnc4n60 lnd4n60 lng4n60 lnh4n60.pdf pdf_icon

LNC4N65

LNC4N60 LND4N60 LNG4N60 LNH4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.4 superior switching performance and high avalance Qg,typ 12.8 nC energy. Features Low RDS(on) Low gate charge

 9.1. Size:1346K  lonten
 lnc4n80 lnd4n80 lnb4n80.pdf pdf_icon

LNC4N65

LNC4N80/LND4N80/LNB4N80 Lonten N-channel 800V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 800V DSS advanced planer VDMOS technology. The I 4A D resulting device has low conduction resistance, R 3.8 DS(on),max superior switching performance and high avalanche Q 18.9 nC g,typ energy. Features Low R DS(on) Low gate charge (typ. Q

MOSTRAR MÁS

Otros transistores... LNC16N60, LNC16N65, LNC18N50, LNC20N60, LNC20N65, LNC2N60, LNC2N65, LNC4N60, IRFB3607, LNC4N80, LNC5N50, LNC5N65B, LNC7N60, LNC7N60D, LNC7N65D, LND04R035B, LND06R062