LNG05R075 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LNG05R075
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 110 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.8 VQgⓘ - Carga de la puerta: 58.2 nC
trⓘ - Tiempo de subida: 26 nS
Cossⓘ - Capacitancia de salida: 320 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET LNG05R075
LNG05R075 Datasheet (PDF)
lnh05r075 lng05r075.pdf
LNH05R075/LNG05R075Lonten N-channel 50V, 80A, 7.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.5mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand h
lnh05r155 lng05r155.pdf
LNH05R155/LNG05R155Lonten N-channel 50V, 40A, 15.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 15.5mGStechnology. This advanced technology has been I 40ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand
lnh05r230 lng05r230.pdf
LNH05R230/LNG05R230Lonten N-channel 50V, 32A, 23m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 23mGStechnology. This advanced technology has been I 32ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig
lnh05r100 lng05r100.pdf
LNH05R100/LNG05R100Lonten N-channel 50V, 64A, 10m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 50VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 10mGStechnology. This advanced technology has been I 64ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig
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