LNG06R230 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LNG06R230
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 33 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 103 nS
Cossⓘ - Capacitancia de salida: 153 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET LNG06R230
LNG06R230 Datasheet (PDF)
lnh06r230 lng06r230 lnc06r230.pdf
LNH06R230/LNG06R230/LNC06R230Lonten N-channel 60V, 33A, 23m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 23mGStechnology. This advanced technology has been I 33ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
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LNH06R200/LNG06R200/LNC06R200Lonten N-channel 60V, 35A, 20m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 20mGStechnology. This advanced technology has been I 35ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
lng06r310 lnh06r310.pdf
LNG06R310/LNH06R310Lonten N-channel 60V, 28A, 31m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 31mGStechnology. This advanced technology has been I 28ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig
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LNC06R140/LNE06R140/LNG06R140/LNH06R140Lonten N-channel 60V, 45A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance,
lnh06r062 lng06r062.pdf
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lnh06r079 lng06r079.pdf
LNH06R079/LNG06R079 Lonten N-channel 60V, 80A, 7.9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.9m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi
lnh06r110 lng06r110.pdf
LNH06R110/LNG06R110 Lonten N-channel 60V, 60A, 11m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 11m technology. This advanced technology has been ID 60A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
lnh06r140 lng06r140.pdf
LNH06R140/LNG06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 45A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
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