LNG4N65 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LNG4N65
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 77 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 31 nS
Cossⓘ - Capacitancia de salida: 55 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.7 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de LNG4N65 MOSFET
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LNG4N65 datasheet
lnc4n65 lnd4n65 lng4n65 lnh4n65 lnf4n65.pdf
LNC4N65 LND4N65 LNG4N65 LNH4N65 LNF4N65 Lonten N-channel 650V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.70 superior switching performance and high Qg,typ 12 nC avalance energy. Features Low RDS(on) Low gate
lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf
LNC4N60 LND4N60 LNG4N60 LNH4N60 LNF4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 600V DSS advanced planar VDMOS technology. The I 4A D resulting device has low conduction resistance, R 2.4 DS(on),max superior switching performance and high avalance Q 12.8 nC g,typ energy. Features Low R DS(on) Low gate
lnc4n60 lnd4n60 lng4n60 lnh4n60.pdf
LNC4N60 LND4N60 LNG4N60 LNH4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.4 superior switching performance and high avalance Qg,typ 12.8 nC energy. Features Low RDS(on) Low gate charge
lnc4n80 lnd4n80 lnb4n80 lng4n80 lnh4n80.pdf
LNC4N80/LND4N80/LNB4N80/LNG4N80/LNH4N80 Lonten N-channel 800V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 800V DSS advanced planer VDMOS technology. The I 4A D resulting device has low conduction resistance, R 3.8 DS(on),max superior switching performance and high avalanche Q 18.9 nC g,typ energy. Features Low R DS(on) Low gat
Otros transistores... LNG06R140 , LNG06R200 , LNG06R230 , LNG06R310 , LNG08R085 , LNG2N60 , LNG2N65 , LNG4N60 , IRLB4132 , LNG4N80 , LNG5N50 , LNG5N65B , LNG7N60D , LNG7N65D , LNH03R031 , LNH045R055 , LNH045R090 .
History: HM4813
History: HM4813
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