LNH045R140 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LNH045R140
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 54 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 45 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 43 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 106 nS
Cossⓘ - Capacitancia de salida: 129 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Encapsulados: TO-251
Búsqueda de reemplazo de LNH045R140 MOSFET
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LNH045R140 datasheet
lnh045r140 lng045r140.pdf
LNH045R140/LNG045R140 Lonten N-channel 45V, 43A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 43A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi
lnh045r210 lng045r210.pdf
LNH045R210/LNG045R210 Lonten N-channel 45V, 35A, 21m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 45V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 21m GS technology. This advanced technology has been I 35A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand h
lnc045r090 lng045r090 lnh045r090.pdf
LNC045R090/LNG045R090/LNH045R090 Lonten N-channel 45V, 70A, 9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 45V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 9m GS technology. This advanced technology has been I 70A D especially tailored to minimize on-state resistance, provide superior switching performance, and with
lnh045r055 lng045r055.pdf
LNH045R055/LNG045R055 Lonten N-channel 45V, 85A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 85A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand
Otros transistores... LNG4N80 , LNG5N50 , LNG5N65B , LNG7N60D , LNG7N65D , LNH03R031 , LNH045R055 , LNH045R090 , AON7410 , LNH045R210 , LNH04R035B , LNH04R050 , LNH04R075 , LNH04R120 , LNH04R165 , LNH05R075 , LNH05R100 .
History: NTD4809NA-1G
History: NTD4809NA-1G
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