LSB55R066GT Todos los transistores

 

LSB55R066GT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LSB55R066GT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 278 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 550 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 63 nS
   Cossⓘ - Capacitancia de salida: 2500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.066 Ohm
   Paquete / Cubierta: TO-247
 

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LSB55R066GT Datasheet (PDF)

 ..1. Size:924K  lonten
 lsb55r066gt lsd55r066gt lse55r066gt.pdf pdf_icon

LSB55R066GT

LSB55R066GT/LSD55R066GT/LSE55R066GT LonFET Lonten N-channel 550V, 45A, 0.066 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 600V advanced super junction technology. The resulting RDS(on),max 0.066 device has extremely low on resistance, making it IDM 135A especially suitable for applications which require Qg,typ 63.5 n

 7.1. Size:849K  lonten
 lsb55r050gt.pdf pdf_icon

LSB55R066GT

LSB55R050GTLonFETLonten N-channel 550V, 60A, 0.05 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.05DS(on),maxdevice has extremely low on resistance, making it I 180 ADMespecially suitable for applications which require Q 84nCg,typsuperior power density a

 8.1. Size:1326K  lonten
 lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt lsc55r140gt.pdf pdf_icon

LSB55R066GT

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT/LSC55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which

 8.2. Size:1326K  lonten
 lsb55r140gf lsc55r140gf lsd55r140gf lse55r140gf lsf55r140gf.pdf pdf_icon

LSB55R066GT

LSB55R140GF/LSC55R140GF/LSD55R140GF/LSE55R140GF/LSF55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which

MOSTRAR MÁS

Otros transistores... LNU2N65 , LPL4459 , LPSA3481 , LPSA3487 , LPSC2301 , LPSC3481 , LPSC3487 , LSB55R050GT , 2SK3918 , LSB55R140GF , LSB55R140GT , LSB60R030HT , LSB60R039GT , LSB60R066GT , LSB60R070HT , LSB60R092GF , LSB60R092GT .

History: NP90N03VUG | IXFT46N30T | SQJ200EP | H5N60U | LSB60R030HT | IPP65R095C7

 

 
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