LSB60R070HT Todos los transistores

 ..1. Size:1049K  lonten
 lsb60r070ht lsd60r070ht.pdf

LSB60R070HT/ LSD60R070HT LonFET Lonten N-channel 600V, 47A, 0.07 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.07 DS(on),max device has extremely low on resistance, making it I 141A DM especially suitable for applications which require Q 68nC g,typ superior pow

 7.1. Size:934K  lonten
 lsb60r092gf lsd60r092gf lse60r092gf.pdf

LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 7.2. Size:993K  lonten
 lsb60r066gt.pdf

LSB60R066GT LonFET Lonten N-channel 600V, 54A, 0.066 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.066 device has extremely low on resistance, making it IDM 135A especially suitable for applications which require Qg,typ 87nC superior power density

 7.3. Size:941K  lonten
 lsb60r092gt lsd60r092gt lse60r092gt.pdf

LSB60R092GT/LSD60R092GT/LSE60R092GT LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 7.4. Size:797K  lonten
 lsb60r030ht.pdf

LSB60R030HT LonFET Lonten N-channel 600V, 100A, 0.030 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.030 DS(on),max device has extremely low on resistance, making it I 300A DM especially suitable for applications which require Q 138nC g,typ superior power densit

 7.5. Size:807K  lonten
 lsb60r039gt.pdf

LSB60R039GT LonFET Lonten N-channel 600V, 80A, 0.039 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.039 device has extremely low on resistance, making it IDM 240A especially suitable for applications which require Qg,typ 110nC superior power density

 7.6. Size:1047K  lonten
 lsb60r099ht lsd60r099ht lse60r099ht.pdf

LSB60R099HT/LSD60R099HT/LSE60R099HT LonFET Lonten N-channel 600V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.099 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require Q 48nC g,typ